FORD MICROELECTRONICS INC has a total of 11 patent applications. Its first patent ever was published in 1986. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and Canada. Its main competitors in its focus markets semiconductors, machines and basic communication technologies are PROGRESSIVE SYS TECH INC, SIBOND L L C and JAPAN INCUBATOR INC.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 7 | |
#2 | WIPO (World Intellectual Property Organization) | 2 | |
#3 | Canada | 1 | |
#4 | United Kingdom | 1 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Machines | |
#3 | Basic communication technologies |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Unspecified technologies | |
#3 | Pulse technique |
# | Name | Total Patents |
---|---|---|
#1 | Kwok Siang P | 4 |
#2 | Kwok Siang Ping | 3 |
#3 | Noufer Glenn E | 2 |
#4 | Lau Chung-Lim | 1 |
#5 | Laude David P | 1 |
#6 | Kim He Bong | 1 |
#7 | Williams Dennis A | 1 |
#8 | Mcintyre David G | 1 |
#9 | Feng Milton | 1 |
#10 | Lemnios Zachary J | 1 |
Publication | Filing date | Title |
---|---|---|
US4959705A | Three metal personalization of application specific monolithic microwave integrated circuit | |
US4985369A | Method for making self-aligned ohmic contacts | |
US4954852A | Sputtered metallic silicide gate for GaAs integrated circuits | |
US4863879A | Method of manufacturing self-aligned GaAs MESFET | |
WO8901235A1 | High effective barrier height transistor and method of making same | |
US4745082A | Method of making a self-aligned MESFET using a substitutional gate with side walls | |
US4771189A | FET gate current limiter circuit | |
US4701643A | FET gate current limiter circuits |