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US3497777A
|
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Multichannel field-effect semi-conductor device
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US3482151A
|
|
Bistable semiconductor integrated device
|
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FR94388E
|
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Improvements to so-called multibandon tecnetron semiconductor devices.
|
|
FR93857E
|
|
Improvements to so-called multibandon teenetrons semiconductor devices.
|
|
FR93763E
|
|
Improvements to semiconductor devices known as multibandon tecnetrons.
|
|
US3465216A
|
|
Bistable semiconductor device for heavy currents
|
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FR93111E
|
|
Improvements to so-called multibandon tecnetron semiconductor devices.
|
|
GB1045314A
|
|
Improvements relating to semiconductor devices
|
|
FR1317256A
|
|
Improvements to semiconductor devices known as multibrand tecnetrons
|
|
GB914228A
|
|
Semi-conductive co-axial diode
|
|
GB853421A
|
|
Improvements in or relating to transistors
|
|
GB853457A
|
|
Very high frequency unipolar transistors
|
|
GB837651A
|
|
High power field-effect transistor
|
|
GB808734A
|
|
Unipolar "field-effect" transistor
|
|
GB729542A
|
|
Improvements in or relating to multi-electrode granular semi-conductive bodies
|
|
NL145399B
|
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SEMICONDUCTIVE FIELD EFFECT DEVICE WITH A NUMBER OF CHANNELS.
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CA658279A
|
|
Field effect tubular transistor
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