US2012112251A1
|
|
Reduction of random telegraph signal (RTS) and 1/f noise in silicon MOS devices, circuits, and sensors
|
US2011248265A1
|
|
Backside texturing by cusps to improve IR response of silicon solar cells and photodetectors
|
US2011140106A1
|
|
Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors
|
US2009167332A1
|
|
Electrical probe
|
US2008099829A1
|
|
Charge trapping dielectric structures with variable band-gaps
|
US2008029832A1
|
|
Bonded strained semiconductor with a desired surface orientation and conductance direction
|
US2007045752A1
|
|
Self aligned metal gates on high-K dielectrics
|
US2007231985A1
|
|
Grown nanofin transistors
|
US2006186458A1
|
|
Germanium-silicon-carbide floating gates in memories
|