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DONGBUANAM SEMICONDUCTOR INC

Overview
  • Total Patents
    2,440
About

DONGBUANAM SEMICONDUCTOR INC has a total of 2,440 patent applications. Its first patent ever was published in 2001. It filed its patents most often in Republic of Korea, United States and China. Its main competitors in its focus markets semiconductors, optics and machine tools are DONGBU ELECTRONICS CO LTD, ANAM SEMICONDUCTOR LTD and HUAHONG SEMICONDUCTOR WUXI CO LTD.

Patent filings in countries

World map showing DONGBUANAM SEMICONDUCTOR INCs patent filings in countries

Patent filings per year

Chart showing DONGBUANAM SEMICONDUCTOR INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Jung Jin Hyo 86
#2 Han Kyung Soo 66
#3 Koh Kwan Ju 49
#4 Lee Jun Seok 40
#5 Han Jae Won 36
#6 Lee Jae Suk 34
#7 Park Sung Hoo 31
#8 Kim Hag Dong 31
#9 Lee Il Ho 30
#10 Han Chang Hun 27

Latest patents

Publication Filing date Title
US2007111515A1 Method of forming metal line stacking structure in semiconductor device
US2007056856A1 Apparatus and method for electrically contacting wafer in electronic chemical plating cell
JP2006191106A Cmos image sensor and manufacturing method therefor
JP2006191108A Cmos image sensor and manufacturing method therefor
JP2006191054A Process for fabricating cmos image sensor
US2006128149A1 Method for forming a metal wiring in a semiconductor device
US2007105295A1 Method for forming lightly-doped-drain metal-oxide-semiconductor (LDD MOS) device
US2007085988A1 Wafer edge exposure method in semiconductor photolithographic processes, and orientation flatness detecting system provided with a WEE apparatus
US2006046465A1 Method for manufacturing a semiconductor device
KR20050026452A Method for stabiliting slurry by using megasonic transducer
KR100552560B1 Method for manufacturing specimen for scanning electron microscope
KR100561306B1 Power transmitting device for smif pod door
KR100551900B1 Temperature controller for electrostatic chuck
KR100562309B1 Transistor having reverse spacer and fabrication method thereof
US2005162914A1 Nonvolatile memory device capable of preventing over-erasure via modified tunneling through a double oxide layer between a floating gate and a control gate
KR100551890B1 He temperature controller
KR100562328B1 A semiconductor transistor device, and a manufacturing method thereof
KR100562327B1 Method of fabricating a trench isolation layer in semiconductor device
KR100562330B1 Mosfet having vertical oxide layer as isolation layer and method of fabricating the same
DE102004063609A1 Fabrication of nonvolatile memory device, such as read only memory, comprises sequentially forming gate oxide layer, polysilicon layer for first control gates, buffer oxide layer, and buffer nitride layer on semiconductor substrate