CROCUS TECHNOLOGY has a total of 18 patent applications. Its first patent ever was published in 2008. It filed its patents most often in EPO (European Patent Office), WIPO (World Intellectual Property Organization) and France. Its main competitors in its focus markets computer technology, semiconductors and electrical machinery and energy are PERNER FREDERICK, LEE PETER WUNG and HAN JINMAN.
# | Country | Total Patents | |
---|---|---|---|
#1 | EPO (European Patent Office) | 11 | |
#2 | WIPO (World Intellectual Property Organization) | 5 | |
#3 | France | 1 | |
#4 | Taiwan | 1 |
# | Industry | |
---|---|---|
#1 | Computer technology | |
#2 | Semiconductors | |
#3 | Electrical machinery and energy | |
#4 | Micro-structure and nano-technology | |
#5 | Machines |
# | Technology | |
---|---|---|
#1 | Static stores | |
#2 | Semiconductor devices | |
#3 | Magnets and transformers | |
#4 | Unspecified technologies | |
#5 | Nanostructure applications |
# | Name | Total Patents |
---|---|---|
#1 | Prejbeanu Ioan Lucian | 9 |
#2 | Nozieres Jean-Pierre | 6 |
#3 | El Baraji Mourad | 3 |
#4 | Javerliac Virgile | 3 |
#5 | Berger Neal | 3 |
#6 | Mackay Kenneth | 2 |
#7 | Conraux Yann | 1 |
#8 | Ducruet Clarisse | 1 |
#9 | Prejbeanu Loan Lucian | 1 |
#10 | Dieny Bernard | 1 |
Publication | Filing date | Title |
---|---|---|
EP2466586A1 | Multibit magnetic random access memory cell with improved read margin | |
EP2447949A1 | Multi level magnetic element | |
EP2309514A1 | Circuit for generating adjustable timing signals for sensing a self-referenced MRAM cell | |
EP2278589A1 | Magnetic element with a fast spin transfer torque writing procedure | |
EP2363862A1 | MRAM-based memory device with rotated gate | |
EP2124228A1 | Magnetic random access memory with an elliptical junction | |
EP2249350A1 | Magnetic memory with a thermally assisted spin transfer torque writing procedure using a low writing current | |
EP2249349A1 | Magnetic memory with a thermally assisted writing procedure and reduced writng field | |
EP2232495A1 | Magnetic memory with a thermally assisted writing procedure | |
FR2929041A1 | MAGNETIC ELEMENT WITH THERMALLY ASSISTED WRITING |