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CREE RESEARCH INC

Overview
  • Total Patents
    179
About

CREE RESEARCH INC has a total of 179 patent applications. Its first patent ever was published in 1988. It filed its patents most often in United States, Australia and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, machines and surface technology and coating are SOITEC SILICON ON INSULATOR TECHNOLOGIES SA, ASSOCIATED SEMICONDUCTOR MFT and WUU DONG-SING.

Patent filings per year

Chart showing CREE RESEARCH INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Palmour John W 53
#2 Edmond John A 44
#3 Kong Hua-Shuang 33
#4 Singh Ranbir 25
#5 Edmond John Adam 17
#6 Negley Gerald H 15
#7 Slater David B Jr 12
#8 Dmitriev Vladimir 12
#9 Lipkin Lori A 11
#10 Glass Robert C 9

Latest patents

Publication Filing date Title
US6218254B1 Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices
AU6391699A Low temperature formation of backside ohmic contacts for vertical devices
WO0107690A1 Growth of bulk single crystals of aluminum
AU9295098A Robust group iii light emitting diode for high reliability in standard packagingapplications
US6281521B1 Silicon carbide horizontal channel buffered gate semiconductor devices
US6107142A Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion
US6121633A Latch-up free power MOS-bipolar transistor
US5969378A Latch-up free power UMOS-bipolar transistor
US6011279A Silicon carbide field controlled bipolar switch
US5923946A Recovery of surface-ready silicon carbide substrates
CA2251737A1 Silicon carbide cmos and method of fabrication
WO9727629A1 Mesa schottky diode with guard ring
US5812105A Led dot matrix drive method and apparatus
US5719409A Silicon carbide metal-insulator semiconductor field effect transistor
US5718760A Growth of colorless silicon carbide crystals
EP0781619A1 Method of making silicone carbide wafers from silicon carbide bulk crystals
US5972801A Process for reducing defects in oxide layers on silicon carbide
CA2201744A1 Method for producing high efficiency light-emitting diodes and resulting diode structures
US5739554A Double heterojunction light emitting diode with gallium nitride active layer
US5612260A Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures