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WO03032397A2
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INSULTING GATE AlGaN/GaN HEMT
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Fabrication of semiconductor materials and devices with controlled electrical conductivity
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Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
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High efficiency light emitters with reduced polarization-induced charges
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Enhanced light extration in LEDs through the use of internal and external optical elements
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Scalable led with improved current spreading structures
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Enhanced light extraction through the use of micro-LED arrays
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Fabrication of semiconductor materials and devices with controlled electrical conductivity
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High output radial dispersing lamp using a solid state light source
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Solar blind photodiode having an active region with a larger bandgap than one or both if its surrounding doped regions
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