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CORENERGY SEMICONDUCTOR TECH CO LTD

Overview
  • Total Patents
    38
  • GoodIP Patent Rank
    40,100
  • Filing trend
    ⇩ 25.0%
About

CORENERGY SEMICONDUCTOR TECH CO LTD has a total of 38 patent applications. It decreased the IP activity by 25.0%. Its first patent ever was published in 2015. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, surface technology and coating and thermal processes are INFINEON TECHNOLOGIES AMERICAS CORP, AVOGY INC and YEDINAK JOSEPH A.

Patent filings in countries

World map showing CORENERGY SEMICONDUCTOR TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 38

Patent filings per year

Chart showing CORENERGY SEMICONDUCTOR TECH CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Zhu Tinggang 36
#2 Li Yiheng 35
#3 Zhang Tingting 31
#4 Wang Dongsheng 21
#5 Li Shiqiang 12
#6 Wang Ke 10
#7 Yan Wensheng 9
#8 Zhang Ziyu 9
#9 Wei Hongyuan 9
#10 Miao Cao 9

Latest patents

Publication Filing date Title
CN111945128A Method for improving adhesion of platinum and substrate and product thereof
CN111786564A High efficiency compact quick charging source
CN110736346A diffusion furnace structure
CN110233105A A kind of preparation method and structure of the adjustable SiC based hemts structure of warpage
CN110246753A A kind of preparation method and structure of the epitaxial structure promoting p-type GaN doping concentration
CN110277344A Carrier is used in a kind of growth of epitaxial wafer
CN110246754A A kind of preparation method and epitaxial structure of HEMT epitaxial structure
CN110021661A Semiconductor devices and preparation method thereof
CN109285774A A kind of junction barrier schottky diode and forming method thereof based on gallium nitride
CN109037153A A kind of preparation method and gallium nitride Base HEMT device of gallium nitride Base HEMT device
CN108899367A A kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device
CN108649065A A kind of normally-off gallium nitride HEMT device and preparation method thereof
CN108493245A A kind of closed type gallium nitride HEMT device
CN108400134A A kind of Schottky diode component and its manufacturing method
CN107492575A A kind of Schottky pole structure, Schottky diode and manufacture method
CN107316813A A kind of preparation method of gallium nitride diode and the preparation method of gallium nitride triode
CN107516629A Improve the buffer growth method of nitride epitaxial layer voltage endurance
CN107301953A A kind of method for making grid self-aligned source and drain electrode in planar power switching device
CN107301952A Grid field plate and source electrode and the Alignment Method of drain electrode in a kind of Planar power device
CN106876271A The preparation method of gallium nitride power triode