CN111945128A
|
|
Method for improving adhesion of platinum and substrate and product thereof
|
CN111786564A
|
|
High efficiency compact quick charging source
|
CN110736346A
|
|
diffusion furnace structure
|
CN110233105A
|
|
A kind of preparation method and structure of the adjustable SiC based hemts structure of warpage
|
CN110246753A
|
|
A kind of preparation method and structure of the epitaxial structure promoting p-type GaN doping concentration
|
CN110277344A
|
|
Carrier is used in a kind of growth of epitaxial wafer
|
CN110246754A
|
|
A kind of preparation method and epitaxial structure of HEMT epitaxial structure
|
CN110021661A
|
|
Semiconductor devices and preparation method thereof
|
CN109285774A
|
|
A kind of junction barrier schottky diode and forming method thereof based on gallium nitride
|
CN109037153A
|
|
A kind of preparation method and gallium nitride Base HEMT device of gallium nitride Base HEMT device
|
CN108899367A
|
|
A kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device
|
CN108649065A
|
|
A kind of normally-off gallium nitride HEMT device and preparation method thereof
|
CN108493245A
|
|
A kind of closed type gallium nitride HEMT device
|
CN108400134A
|
|
A kind of Schottky diode component and its manufacturing method
|
CN107492575A
|
|
A kind of Schottky pole structure, Schottky diode and manufacture method
|
CN107316813A
|
|
A kind of preparation method of gallium nitride diode and the preparation method of gallium nitride triode
|
CN107516629A
|
|
Improve the buffer growth method of nitride epitaxial layer voltage endurance
|
CN107301953A
|
|
A kind of method for making grid self-aligned source and drain electrode in planar power switching device
|
CN107301952A
|
|
Grid field plate and source electrode and the Alignment Method of drain electrode in a kind of Planar power device
|
CN106876271A
|
|
The preparation method of gallium nitride power triode
|