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FORCE MOS TECHNOLOGY CORP

Overview
  • Total Patents
    14
About

FORCE MOS TECHNOLOGY CORP has a total of 14 patent applications. Its first patent ever was published in 2006. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, electrical machinery and energy and environmental technology are SUZHOU GOOD-ARK ELECTRONICS CO LTD, ALPHA & OMEGA SEMICONDUCTOR and YEDINAK JOSEPH A.

Patent filings in countries

World map showing FORCE MOS TECHNOLOGY CORPs patent filings in countries
# Country Total Patents
#1 United States 14

Patent filings per year

Chart showing FORCE MOS TECHNOLOGY CORPs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Hshieh Fwu-Iuan 13
#2 Hshieh Fwa-Iuan 1

Latest patents

Publication Filing date Title
US2010193835A1 Trench insulated gate bipolar transistor (GBT) with improved emitter-base contacts and metal schemes
US2010163975A1 Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures
US2010117145A1 Configuration of trenched semiconductor power device to reduce masked process
US2010044796A1 Depletion mode trench MOSFET for improved efficiency of DC/DC converter applications
US2009294859A1 Trench MOSFET with embedded junction barrier Schottky diode
US2009108338A1 Trench MOSFET with implanted drift region
US2009085107A1 Trench MOSFET with thick bottom oxide tub
US2009057756A1 Trench MOSFET with trench termination and manufacture thereof
US2009026533A1 Trench MOSFET with multiple P-bodies for ruggedness and on-resistance improvements
US2008303081A1 Device configuration and method to manufacture trench MOSFET with solderable front metal
US2008258224A1 Trenched MOSFETs with improved gate-drain (GD) clamp diodes
US2008246082A1 Trenched mosfets with embedded schottky in the same cell
US2008179662A1 Closed trench MOSFET with floating trench rings as termination
US2008128829A1 Trench MOSFET with cell layout, ruggedness, truncated corners