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WUXI TONGFANG MICROELECTRONICS CO LTD

Overview
  • Total Patents
    25
  • GoodIP Patent Rank
    64,052
  • Filing trend
    ⇩ 100.0%
About

WUXI TONGFANG MICROELECTRONICS CO LTD has a total of 25 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 2014. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, electrical machinery and energy and measurement are YANGZHOU GUOYANG ELECTRONIC CO LTD, AVOGY INC and SHIRAISHI MASAKI.

Patent filings in countries

World map showing WUXI TONGFANG MICROELECTRONICS CO LTDs patent filings in countries
# Country Total Patents
#1 China 25

Patent filings per year

Chart showing WUXI TONGFANG MICROELECTRONICS CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Zhang Haitao 25
#2 Bai Yuming 25
#3 Liu Feng 6
#4 Pan Ye 5
#5 Xue Lu 4
#6 Qian Zhenhua 4
#7 Guo Jingxian 3
#8 Zhang Yanwang 1
#9 Xu Chengfu 1
#10 Leng Qiang 1

Latest patents

Publication Filing date Title
CN107221500A Double trench field-effect pipes and preparation method thereof
CN108666368A A kind of super node MOSFET gradual change terminal structure and preparation method thereof
CN108181564A A kind of UIS test circuits and its test method
CN106340458A Manufacturing method for reducing manufacturing cost of deep-groove type super junction MOSFET
CN106373948A Field-effect transistor arrangement structure of integrated gate turn-off thyristor driving circuit board
CN105846656A Low-conduction maintaining circuit of gate-turn-off thyristor and control method
CN105810723A Structure and method of metal-oxide-semiconductor field-effect transistor (MOSFET) capable of achieving reverse blocking
CN105024576A Integrated gate turn-off thyristor three-level power module
CN105023949A MOSFET capable of realizing reverse blocking
CN105047718A Metal-oxide-semiconductor field effect transistor (MOSFET) terminal structure and method for improving voltage endurance capability
CN105006955A IGTO encapsulation structure
CN104851908A High-voltage super-junction MOSFET device terminal structure and manufacturing method thereof
CN104779295A Semi-super-junction MOSFET structure and manufacturing method thereof
CN104779297A High-voltage super junction MOSFET structure and manufacturing method thereof
CN104779296A Asymmetric super junction MOSFET structure and manufacturing method thereof
CN104779298A Super-junction MOSFET terminal structure and manufacturing method thereof
CN104658901A Preparation method for split gate trench MOSFET(metal-oxide-semiconductor-field-effect-transistor)
CN104617147A Trench MOSFET structure and manufacturing method thereof
CN104638011A Trench MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device and manufacturing method thereof
CN104637822A Double-trench field effect tube and manufacturing method thereof