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CHINO EXCEL TECHNOLOGY CORP

Overview
  • Total Patents
    26
About

CHINO EXCEL TECHNOLOGY CORP has a total of 26 patent applications. Its first patent ever was published in 1999. It filed its patents most often in Taiwan, China and United States. Its main competitors in its focus markets semiconductors are VERTICLE, SHANGHAI JINGYI ELECTRONIC TECH CO LTD and GREAT TEAM BACKEND FOUNDRY (DONGGUAN) LTD.

Patent filings in countries

World map showing CHINO EXCEL TECHNOLOGY CORPs patent filings in countries
# Country Total Patents
#1 Taiwan 21
#2 China 2
#3 United States 2
#4 Republic of Korea 1

Patent filings per year

Chart showing CHINO EXCEL TECHNOLOGY CORPs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Jian Feng-Tzuo 14
#2 Chien Feng-Tso 8
#3 Tu Gau-Wei 7
#4 Tu Kao-Way 6
#5 Tung Cheng-Hui 5
#6 Gong Zhong-Yuan 4
#7 Li You-Ren 4
#8 Su Shih-Tzung 3
#9 Li Ming-Chin 3
#10 Dung Jeng-Huei 3

Latest patents

Publication Filing date Title
CN1542984A Power MOSFET device and method for manufacturing same
TW200421612A Double trench power MOSFET device and manufacturing method thereof
TW200414407A Method and device to increase the switching speed by changing the gate oxide structure of power transistor (2)
TW200414532A Gate self-aligned four-mask power transistor device and the manufacturing method thereof
TW200414402A Method and device to increase the switching speed by changing the gate oxide structure of power transistor
TW200411780A Self-aligned trench power metal oxide semiconductor field effect transistor device and its manufacturing method
TW569448B Device with high tolerance to avalanche breakdown voltage, and method to increase the tolerance of device to avalanche breakdown voltage
US2003094678A1 Wireless bonded semiconductor device and method for packaging the same
TW574724B Method and apparatus of using guard ring connection technique for circuit integration of power semiconductor device
TW533487B The high switching speed of the power MOSFET by changing the poly structure
TW504816B Semiconductor device and the packaging method without bonding wire
TW529145B Semiconductor device free of bonding wire and method for encapsulating the same
KR20030023974A Method of control switching speed of insulated gate bipolar transistor(igbt) device, its structure and method of fabrication
TW503541B Packaging method of semiconductor power device and device of the same
TW478163B Power MOSFET device for reducing reverse current leakage transient and improving avalanche breakdown current and the manufacturing method thereof
TW463298B Method and device for increasing the switching speed of power MOSFET using ion implantation technique
TW511257B Flip-chip mounting method for decreasing conducting resistance in power transistor of charging battery protection circuit
TW483165B Method and apparatus for decreasing power MOSFET leakage current and raising breakdown voltage by using well region gradual change doping
TW462082B Improved structure of trench-type power MOSFET and its manufacturing method
TW480720B Trench type power MOSFET device with reduced epitaxy layer resistance value and the manufacturing method of the same