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BRION TECH INC

Overview
  • Total Patents
    87
About

BRION TECH INC has a total of 87 patent applications. Its first patent ever was published in 2003. It filed its patents most often in United States, Japan and Netherlands. Its main competitors in its focus markets optics, computer technology and semiconductors are KOTANI TOSHIYA, INVARIUM INC and LUMINESCENT TECHNOLOGIES INC.

Patent filings per year

Chart showing BRION TECH INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Ye Jun 73
#2 Cao Yu 47
#3 Chen Xun 23
#4 Feng Hanying 15
#5 Shao Wenjin 12
#6 Chen Luoqi 12
#7 Pease R Fabian W 11
#8 Hunsche Stefan 10
#9 Lu Yen-Wen 8
#10 Li Jiangwei 6

Latest patents

Publication Filing date Title
NL2003718A Methods and system for model-based generic matching and tuning.
NL2003716A Harmonic resist model for use in a lithographic apparatus and a device manufacturing method.
NL2003699A Method and system for lithography process-window-maximixing optical proximity correction.
NL2003702A Pattern selection for lithographic model calibration.
NL2003696A Scanner model representation with transmission cross coefficients.
NL2003654A Methods and system for lithography calibration.
NL2003386A Lithographic processing method, and device manufactured thereby.
WO2010005957A1 Illumination optimization
WO2009148976A1 Lens heating compensation methods
NL1036750A1 A Method Of Performing Mask-Writer Tuning and Optimization.
NL1036189A1 Methods and System for Lithography Process Window Simulation.
JP2009139938A Method for performing pattern decomposition for full chip design
KR20100027129A Methods for performing model-based lithography guided layout design
US7703069B1 Three-dimensional mask model for photolithography simulation
US2008309897A1 Multivariable solver for optical proximity correction
US7694267B1 Method for process window optimized optical proximity correction
US2007050749A1 Method for identifying and using process window signature patterns for lithography process control
US2007032896A1 Method for lithography model calibration
EP1920369A2 System and method for creating a focus-exposure model of a lithography process
US2006273242A1 System and method for characterizing aerial image quality in a lithography system