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BOTULA ALAN B

Overview
  • Total Patents
    19
About

BOTULA ALAN B has a total of 19 patent applications. Its first patent ever was published in 2008. It filed its patents most often in United States and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, telecommunications and basic communication technologies are CHEN CHUNG-HUI, PENDHARKAR SAMEER P and CHEN WEIZE.

Patent filings in countries

World map showing BOTULA ALAN Bs patent filings in countries

Patent filings per year

Chart showing BOTULA ALAN Bs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Botula Alan B 19
#2 Joseph Alvin J 14
#3 Shi Yun 9
#4 Slinkman James A 8
#5 Phelps Richard A 5
#6 Nowak Edward J 4
#7 Wolf Randy L 4
#8 Rassel Robert M 3
#9 Ellis-Monaghan John J 3
#10 Levy Max G 3

Latest patents

Publication Filing date Title
US2013196493A1 Silicon-on-insulator substrate and method of forming
US2013168835A1 High resistivity silicon-on-insulator substrate and method of forming
US2013140668A1 Forming structures on resistive substrates
US2013141114A1 Non-linear kerf monitor and design structure thereof
US2013134518A1 Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate
US2012146158A1 Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure
US2012038024A1 Low harmonic RF switch in SOI
US2012025345A1 Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer
US2011260281A1 Shielding for high-voltage semiconductor-on-insulator devices
US2011131542A1 Silicon-on-insulator (SOI) structure configured for reduced harmonics, design structure and method
US2011127529A1 Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure
US2010244934A1 SOI radio frequency switch with enhanced electrical isolation
US2010156511A1 BIAS voltage generation circuit for an SOI radio frequency switch
US2009250772A1 Field effect transistor and method of manufacture