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WO2019114407A1
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Field effect transistor, method of fabricating field effect transistor, and electronic device
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CN110072336A
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The method for separating flexible base board and rigid conductive carrier
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A kind of production method of GaN base HEMT device
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A kind of enhanced HEMT device of GaN base and preparation method thereof
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A kind of GaN base HEMT device and its manufacturing method
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A kind of Ohm contact production method suitable for AlGaN/GaN devices
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Gallium nitride base power device of inverted structure with graphene heat dissipating layer and preparation method thereof
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A kind of wafer scale GaN device substrate transfer method
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A kind of enhanced MOS HEMT devices of GaN base and preparation method thereof
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Using the gallium nitride base power device and preparation method thereof of carbon nanotube microchannel heat sink
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Has the preparation method of p-type two-dimensional material grid enhancement type gallium nitride fieldtron
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A kind of preparation method of enhancement type gallium nitride fieldtron
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Field-effect transistor, the method and electronic device for manufacturing field-effect transistor
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Field-effect transistor, manufacture method and electronic device with source electrode coordination electrode
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