Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations
US2013320449A1
Late in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations
US2013292774A1
Method for forming a semiconductor device having raised drain and source regions and corresponding semiconductor device
US2013095620A1
Methods of forming highly scaled semiconductor devices using a disposable spacer technique
