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MANI KRISHNAKUMAR

Overview
  • Total Patents
    21
About

MANI KRISHNAKUMAR has a total of 21 patent applications. Its first patent ever was published in 2008. It filed its patents most often in United States. Its main competitors in its focus markets computer technology, semiconductors and electrical machinery and energy are AMIC TECHNOLOGY INC, TOSHIBA MEMORY SYSTEMS CO LTD and NANTRONICS SEMICONDUCTOR INC.

Patent filings in countries

World map showing MANI KRISHNAKUMARs patent filings in countries
# Country Total Patents
#1 United States 21

Patent filings per year

Chart showing MANI KRISHNAKUMARs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Mani Krishnakumar 21
#2 Wilson Jannier Maximo Roiz 2
#3 Satoh Kimihiro 1
#4 Gupta Anil 1
#5 Chen Benjamin 1
#6 Kamdar Jay 1

Latest patents

Publication Filing date Title
US2015021724A1 Self contacting bit line to mram cell
US8900883B1 Methods for manufacturing carbon ribbons for magnetic devices
US2015031146A1 Tool for annealing of magnetic stacks
US8625340B1 Magnetic sidewalls for write lines in field-induced MRAM and methods of manufacturing them
US8767435B1 Field programming method for magnetic memory devices
US8730719B1 MRAM with metal gate write conductors
US2014256061A1 Method of etching MTJ using CO process chemistries
US2014254250A1 Magnetic memory circuit with stress inducing layer
US8835101B1 Method for fabricating a circuit
US2014301138A1 Memory cell with Schottky diode
US2015055410A1 Memory circuit and method for dissipating external magnetic field
US2015355272A1 Integrated circuit with sensing unit and method for using the same
US8565012B1 Magnetic enhancement layer in memory cell
US8711612B1 Memory circuit and method of forming the same using reduced mask steps
US2012087180A1 Semiconductor integrated circuit for low and high voltage operations
US2011032755A1 Voltage boosting in MRAM current drivers
US2010220524A1 Magnetic booster for magnetic random access memory
US2010207952A1 Magnetic memory display driver system
US2009128966A1 Magnetic memory cell based on a magnetic tunnel junction(mtj) with low switching field shapes
US2009010046A1 magnetic memory device with non-rectangular cross section current carrying conductors