AMMONO SP ZOO has a total of 100 patent applications. Its first patent ever was published in 2002. It filed its patents most often in WIPO (World Intellectual Property Organization), United States and China. Its main competitors in its focus markets surface technology and coating, optics and machines are BONDOKOV ROBERT T, NANJING TONGLI CRYSTAL MATERIAL RES INSTITUTE CO LTD and AMMONO SPÓŁKA Z OGRANICZONĄ ODPOWIEDZIALNOŚCIĄ.
# | Country | Total Patents | |
---|---|---|---|
#1 | WIPO (World Intellectual Property Organization) | 19 | |
#2 | United States | 18 | |
#3 | China | 12 | |
#4 | Australia | 10 | |
#5 | EPO (European Patent Office) | 9 | |
#6 | Taiwan | 9 | |
#7 | Japan | 7 | |
#8 | Republic of Korea | 6 | |
#9 | Canada | 2 | |
#10 | Israel | 2 | |
#11 | Malaysia | 2 | |
#12 | Ukraine | 2 | |
#13 | Hong Kong | 1 | |
#14 | Russian Federation | 1 |
# | Industry | |
---|---|---|
#1 | Surface technology and coating | |
#2 | Optics | |
#3 | Machines | |
#4 | Semiconductors | |
#5 | Micro-structure and nano-technology |
# | Technology | |
---|---|---|
#1 | Single-crystal-growth | |
#2 | Devices using light amplification | |
#3 | Unspecified technologies | |
#4 | Semiconductor devices | |
#5 | Nanostructure applications |
# | Name | Total Patents |
---|---|---|
#1 | Garczynski Jerzy | 84 |
#2 | Kanbara Yasuo | 79 |
#3 | Doradzinski Roman | 75 |
#4 | Dwilinski Robert | 74 |
#5 | Sierzputowski Leszek | 44 |
#6 | Sierzputowski Leszek P | 29 |
#7 | Dwilinski Robert Tomasz | 11 |
#8 | Doradzinski Roman Marek | 11 |
#9 | Sierzputowski Leszek Piotr | 10 |
#10 | Jerzy Garczynski | 5 |
Publication | Filing date | Title |
---|---|---|
EP2267197A1 | Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates | |
US2009315012A1 | Method of preparing light emitting device | |
WO2005122232A1 | High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof. | |
AU2003285768A1 | A template type substrate and a method of preparing the same | |
WO2004053208A1 | Process for obtaining bulk-crystalline gallium-containing nitride | |
AU2003238980A8 | Process for obtaining of bulk monocrystallline gallium-containing nitride | |
US2006191472A1 | Apparatus for obtaining a bulk single crystal using supercritical ammonia | |
TW200400674A | Nitride semiconductor laser device and manufacturing method thereof | |
CN1575534A | Light emitting element structure using nitride bulk single crystal layer | |
MY134043A | Substrate for epitaxy | |
CA2449714A1 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride | |
UA78705C2 | Process and apparatus for obtaining of bulky nitride monocrystal, containing gallium |