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ADVANCED POWER TECHNOLOGY

Overview
  • Total Patents
    60
About

ADVANCED POWER TECHNOLOGY has a total of 60 patent applications. Its first patent ever was published in 1986. It filed its patents most often in United States, EPO (European Patent Office) and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, machines and engines, pumps and turbines are SUPER NOVA OPTOELECTRONICS CORP, TRAN LUAN C and VISUAL PHOTONICS EPITAXY CO LT.

Patent filings per year

Chart showing ADVANCED POWER TECHNOLOGYs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Meyer Theodore O 14
#2 Hollinger Theodore G 14
#3 Pike Douglas A Jr 10
#4 Tsang Dah Wen 10
#5 Pike Jr Douglas A 9
#6 Tsang Dah W 9
#7 Sdrulla Dumitru 7
#8 Folsom Lawrence R 7
#9 Katana James M 7
#10 Mosier Ii John W 7

Latest patents

Publication Filing date Title
US2005029226A1 Plasma etching using dibromomethane addition
US2004164347A1 Design and fabrication of rugged FRED
CN1706089A AC-DC power converter having high input power factor and low harmonic distortion
US2003141587A1 Split-gate power module and method for suppressing oscillation therein
US2002074585A1 Self-aligned power MOSFET with enhanced base region
US2002066903A1 Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates
CN1496586A Power MOS device with asymmetrical channel structure
US5528058A IGBT device with platinum lifetime control and reduced gaw
US5250904A Device for predicting imminent failure of a stationary lead acid battery in a float mode
US5283202A IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions
US5283201A High density power device fabrication process
US5231474A Semiconductor device with doped electrical breakdown control region
CA1326568C Profile tailored trench etch using a sf_-0_ etching composition wherein both isotropic and anisotropic etching is achieved by varying the amount of oxygen
US5262336A IGBT process to produce platinum lifetime control
RU2101586C1 Hydraulic machine
US5256583A Mask surrogate semiconductor process with polysilicon gate protection
US5182234A Profile tailored trench etch using a SF6 -O2 etching composition wherein both isotropic and anisotropic etching is achieved by varying the amount of oxygen
US5089434A Mask surrogate semiconductor process employing dopant-opaque region
US5019522A Method of making topographic pattern delineated power MOSFET with profile tailored recessed source
US5045903A Topographic pattern delineated power MOSFET with profile tailored recessed source