ADVANCED INTERCONNECT MATERIALS LLC has a total of 13 patent applications. Its first patent ever was published in 2007. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and China. Its main competitors in its focus markets semiconductors, surface technology and coating and materials and metallurgy are JIANGXI ZHAOCHI SEMICONDUCTOR CO LTD, ENSILTECH CORP and XIANGNENG HUALEI OPTOELECTRONIC CO LTD.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 4 | |
#2 | WIPO (World Intellectual Property Organization) | 4 | |
#3 | China | 2 | |
#4 | Taiwan | 2 | |
#5 | EPO (European Patent Office) | 1 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Surface technology and coating | |
#3 | Materials and metallurgy | |
#4 | Optics | |
#5 | Machines |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Coating metallic material | |
#3 | Alloys | |
#4 | Nonlinear optics | |
#5 | Unspecified technologies | |
#6 | Treatment of glass |
# | Name | Total Patents |
---|---|---|
#1 | Koike Junichi | 13 |
#2 | Kawakami Hideaki | 6 |
#3 | Yun Pilsang | 6 |
#4 | Shibatomi Akihiro | 4 |
#5 | Jung Kunhwa | 2 |
#6 | Naito Mayumi | 2 |
#7 | Sutou Yuji | 2 |
Publication | Filing date | Title |
---|---|---|
WO2012121415A1 | Electrode for oxide semiconductor and method for producing same, and oxide semiconductor device equipped with electrode | |
CN102971857A | Thin film transistor | |
US2011233560A1 | Electrode for silicon carbide, silicon carbide semiconductor element, silicon carbide semiconductor device and method for forming electrode for silicon carbide | |
US2011032467A1 | Copper alloy and liquid-crystal display device | |
US2009253260A1 | Semiconductor device, its manufacturing method, and sputtering target material for use in the method | |
EP1990432A1 | Semiconductor device, its manufacturing method, and sputtering target material for use in the method |