ABRAHAM DAVID W

Overview

Total Patents

13

About

ABRAHAM DAVID W has a total of 13 patent applications. Its first patent ever was published in 2008. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, computer technology and machines are SOI TEC SILICON ON INSULATOR TECHNOLOGIES, FUJITSU VLSI LTD and SHUKH ALEXANDER MIKHAILOVICH.

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Patent filings in countries

World map showing ABRAHAM DAVID Ws patent filings in countries

#	Country	Total Patents
#1	United States	13

Patent filings per year

Chart showing ABRAHAM DAVID Ws patent filings per year from 1900 to 2020

Similar Companies

SOI TEC SILICON ON INSULATOR TECHNOLOGIES 90% similarity

FUJITSU VLSI LTD 90% similarity

SHUKH ALEXANDER MIKHAILOVICH 88% similarity

SHEPARD DANIEL R 87% similarity

RADIANT TECHNOLOGIES 86% similarity

OHNO HIDEO 86% similarity

PICKETT MATTHEW D 86% similarity

INTEGRATED MAGNETOELECTRONICS CORP 86% similarity

TAKAHASHI TSUYOSHI 85% similarity

RAMTRON CORP 85% similarity

Focus industries

#	Industry
#1	Semiconductors
#2	Computer technology
#3	Machines
#4	Electrical machinery and energy
#5	Audio-visual technology
#6	Micro-structure and nano-technology

Focus technologies

#	Technology
#1	Semiconductor devices
#2	Static stores
#3	Unspecified technologies
#4	Magnets and transformers
#5	Special information storage
#6	Nanostructure applications

Top inventors

#	Name	Total Patents
#1	Abraham David W	13
#2	Gaidis Michael C	4
#3	Worledge Daniel C	3
#4	Nowak Janusz J	2
#5	Mojumder Niladri N	2
#6	O'Sullivan Eugene J	2
#7	Assefa Solomon	1
#8	Sun Jonathan Z	1
#9	Hu Guohan	1
#10	Solomon Assefa	1

Latest patents

Publication	Filing date	Title
US2014037992A1	2012-07-31	Magnetic random access memory with synthetic antiferromagnetic storage layers
US2014037991A1	2012-07-31	Magnetic random access memory with synthetic antiferromagnetic storage layers
US2014037990A1	2012-07-31	Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers
US2012280338A1	2011-05-03	Spin torque MRAM using bidirectional magnonic writing
US2012281467A1	2011-05-03	Magnonic magnetic random access memory device
US2012281460A1	2011-05-03	Noncontact writing of nanometer scale magnetic bits using heat flow induced spin torque effect
US8105850B1	2010-11-02	Process for selectively patterning a magnetic film structure