Learn more

YANGZHOU ZHONGKE SEMICONDUCTOR LIGHTING CO LTD

Overview
  • Total Patents
    53
  • GoodIP Patent Rank
    52,448
  • Filing trend
    ⇩ 50.0%
About

YANGZHOU ZHONGKE SEMICONDUCTOR LIGHTING CO LTD has a total of 53 patent applications. It decreased the IP activity by 50.0%. Its first patent ever was published in 2010. It filed its patents most often in China, WIPO (World Intellectual Property Organization) and United States. Its main competitors in its focus markets semiconductors, surface technology and coating and optics are CHONGQING KANGJIA OPTOELECTRONIC TECH RESEARCH INSTITUTE CO LTD, KOEZUKA JUNICHI and ACEPLUX OPTOTECH INC.

Patent filings in countries

World map showing YANGZHOU ZHONGKE SEMICONDUCTOR LIGHTING CO LTDs patent filings in countries

Patent filings per year

Chart showing YANGZHOU ZHONGKE SEMICONDUCTOR LIGHTING CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Wang Guohong 48
#2 Li Zhicong 44
#3 Sun Yijun 32
#4 Dai Jun 16
#5 Jin Yuzhe 14
#6 Li Panpan 14
#7 Li Hongjian 14
#8 Feng Yaping 14
#9 Wang Mingyang 12
#10 Li Jing 11

Latest patents

Publication Filing date Title
CN112259670A LED light-emitting module and manufacturing method thereof
CN112216771A Manufacturing method of substrate for Mini-LED chip with large light-emitting angle
CN112216770A Processing method of substrate with large light-emitting angle
CN110518101A A kind of UV LED epitaxial structure and its growing method
CN110534542A A kind of integrated light-emitting Micro LED chip and preparation method thereof
CN110416249A A kind of light emitting semiconductor device and preparation method thereof
CN108594531A A kind of liquid crystal display backlight module and production method
CN107452845A A kind of large scale LED epitaxial slice and its growing method
CN106920866A Prolong method in a kind of place of regulation and control UV LED epitaxial wafer wavelength
CN106206879A A kind of epitaxial growth technology of nitride semiconductor photogenerator
CN106206887A A kind of LED epitaxial slice and production method thereof
CN106206892A Preparation method for the epitaxial wafer with double-buffering layer of nitride growth
CN106328772A Preparation method of high-quality nitride epitaxial wafer
CN106206876A A kind of manufacture method of LED epitaxial slice
CN106252468A A kind of production method of gallium nitride based LED epitaxial slice
CN106129209A The epitaxial wafer of a kind of high LED luminous efficiency and growing method thereof
CN106025040A Single-sided light emission light emitting element and production method thereof
CN105932123A Nitride light-emitting diode epitaxial wafer with low-temperature AlInN insertion barrier layer, and production technology for nitride light-emitting diode epitaxial wafer
CN105514237A GaN-based LED (Light-emitting Diode) epitaxial structure and production method thereof
CN105655461A LED chip and manufacturing method thereof