Learn more

XU HUIWEN

Overview
  • Total Patents
    20
  • GoodIP Patent Rank
    210,040
  • Filing trend
    ⇩ 100.0%
About

XU HUIWEN has a total of 20 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 2007. It filed its patents most often in United States and China. Its main competitors in its focus markets semiconductors, computer technology and electrical machinery and energy are HIGASHITANI MASAAKI, BREITWISCH MATTHEW J and TC LAB INC.

Patent filings in countries

World map showing XU HUIWENs patent filings in countries
# Country Total Patents
#1 United States 12
#2 China 8

Patent filings per year

Chart showing XU HUIWENs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Xu Huiwen 20
#2 Ping Er-Xuan 6
#3 Al-Bayati Amir 2
#4 Xia Li-Qun 2
#5 M Saad Hichem 2
#6 Witty Derek 2
#7 Shek Mei-Yee 2
#8 Costa Xiying 2
#9 Chen Xiying 1
#10 Kwon Thomas J 1

Latest patents

Publication Filing date Title
CN107370338A Engine
CN106724121A Multifunctional book box
CN106100450A A kind of electromagnetism is urged into device and antigravity
CN103953512A Fuel-free engine
CN103973168A Electromagnetic propulsion promoter and gravitational counterforce
CN103939309A Gravity machine
CN103944451A Power machine
CN103956090A Flying saucer
US2011095258A1 Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
US2011095257A1 Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
US2011278529A1 Memory employing diamond-like carbon resistivity-switchable material and methods of forming the same
US2010193916A1 Methods for increased array feature density
US2010163824A1 Modulation of resistivity in carbon-based read-writeable materials
US2010038623A1 Methods and apparatus for increasing memory density using diode layer sharing
US2010032638A1 Memory cell that includes a carbon-based memory element and methods forming the same
US2010006811A1 Carbon-based interface layer for a memory device and methods of forming the same
US2007287301A1 Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics