XINDIUM TECHNOLOGIES INC has a total of 13 patent applications. Its first patent ever was published in 2002. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and Australia. Its main competitors in its focus markets semiconductors, electrical machinery and energy and telecommunications are DIAMOND MICROWAVE DEVICES LTD, XEMOD INC and TAKAGI KAZUTAKA.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 6 | |
#2 | WIPO (World Intellectual Property Organization) | 3 | |
#3 | Australia | 2 | |
#4 | Taiwan | 2 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Electrical machinery and energy | |
#3 | Telecommunications | |
#4 | Basic communication technologies | |
#5 | Control |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Amplifiers | |
#3 | Electrically-conductive connections | |
#4 | Waveguides | |
#5 | Systems for regulating electrical variables |
# | Name | Total Patents |
---|---|---|
#1 | Feng Milton | 9 |
#2 | Shen Shyh-Chiang | 8 |
#3 | Caruth David C | 6 |
#4 | Caruth David Charles | 2 |
#5 | Schutt-Aine Jose | 2 |
#6 | Feng Jeffrey T | 1 |
#7 | Greene Matthew Russell | 1 |
#8 | Chiang Shyh | 1 |
Publication | Filing date | Title |
---|---|---|
WO2006076179A2 | Bias compensation circuit for rf power amplifier | |
US2006006947A1 | Current mirror biasing circuit with power control for HBT power amplifiers | |
US2005173730A1 | Collector layer structure for a double hetero-junction bipolar transistor for power amplification applications | |
US6727530B1 | Integrated photodetector and heterojunction bipolar transistors | |
US6770919B2 | Indium phosphide heterojunction bipolar transistor layer structure and method of making the same | |
WO03047041A1 | Rf connector with chip carrier and coaxial to coplanar transition |