WO0111681A1
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Mosfet device having recessed gate-drain shield and method
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US5949649A
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High power semiconductor device having bolt-down ceramic platform
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US5918137A
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MOS transistor with shield coplanar with gate electrode
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US6001710A
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MOSFET device having recessed gate-drain shield and method
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US5850104A
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Integral lid/clamp for high power transistor
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US5821602A
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RF power transistor having improved stability and gain
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US5825089A
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Low thermal resistance spring biased RF semiconductor package mounting structure
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US5841166A
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Lateral DMOS transistor for RF/microwave applications
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AU2555095A
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Bipolar transistor for use in linear amplifiers
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US5570063A
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RF power amplifier with signal predistortion for improved linearity
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US5644268A
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Feed forward RF amplifier for combined signal and error amplification
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US5528196A
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Linear RF amplifier having reduced intermodulation distortion
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US5414296A
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Venetian blind cell layout for RF power transistor
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US5374895A
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NMR/MRI pulse amplifier
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US5825088A
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Low thermal resistance semiconductor package and mounting structure
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US5338974A
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RF power transistor package
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US5329156A
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Feed bus for RF power transistors
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US5315265A
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Low intermodulation distortion FET amplifier using parasitic resonant matching
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US5304959A
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Planar microstrip balun
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