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CREE MICROWAVE INC

Overview
  • Total Patents
    57
About

CREE MICROWAVE INC has a total of 57 patent applications. Its first patent ever was published in 1996. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and China. Its main competitors in its focus markets basic communication technologies, semiconductors and audio-visual technology are MAXI AMP INC, VORHAUS JAMES L and US MONOLITHICS LLC.

Patent filings per year

Chart showing CREE MICROWAVE INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Pengelly Raymond Sydney 13
#2 Wood Simon Maurice 10
#3 Wood Simon M 8
#4 Pengelly Raymond S 8
#5 Darmawan Johan Agus 6
#6 Quinn John Phillip 6
#7 Darmawan Johan A 6
#8 Bartlow Howard D 5
#9 Quinn John P 5
#10 Crescenzi Jr Emil James 4

Latest patents

Publication Filing date Title
US2005280087A1 Laterally diffused MOS transistor having source capacitor and gate shield
US2005280085A1 LDMOS transistor having gate shield and trench source capacitor
US2003201833A1 N-way RF power amplifier circuit with increased back-off capability and power added efficiency using unequal input power division
US2003210096A1 N-way RF power amplifier circuit with increased back-off capability and power added efficiency using selected phase lengths and output impedances
US2004113697A1 Single package multi-chip RF power amplifier
US2004085132A1 RF transistor amplifier linearity using suppressed third order transconductance
US2004061214A1 Packaged RF power transistor having RF bypassing/output matching network
US6888167B2 Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US2003141933A1 N-way RF power amplifier with increased backoff power and power added efficiency
US2003085425A1 Silicon on insulator device with improved heat removal
US6549090B2 Inverted coplanar waveguide coupler with integral microstrip connection ports
US6548869B2 Voltage limiting protection for high frequency power device
US6525423B2 Semiconductor device package and method of die attach
US6506648B1 Method of fabricating a high power RF field effect transistor with reduced hot electron injection and resulting structure
US6437416B1 Semiconductor structure having a planar junction termination with high breakdown voltage and low parasitic capacitance