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XIAMEN SANAN INTEGRATED CIRCUIT CO LTD

Overview
  • Total Patents
    161
  • GoodIP Patent Rank
    8,998
  • Filing trend
    ⇧ 95.0%
About

XIAMEN SANAN INTEGRATED CIRCUIT CO LTD has a total of 161 patent applications. It increased the IP activity by 95.0%. Its first patent ever was published in 2016. It filed its patents most often in China, WIPO (World Intellectual Property Organization) and United States. Its main competitors in its focus markets semiconductors, basic communication technologies and optics are IQE PLC, QUANZHOU SANAN SEMICONDUCTOR TECH CO LTD and SHURAI KAGI KOFUN YUGENKOSHI.

Patent filings in countries

World map showing XIAMEN SANAN INTEGRATED CIRCUIT CO LTDs patent filings in countries

Patent filings per year

Chart showing XIAMEN SANAN INTEGRATED CIRCUIT CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Cai Wenbi 61
#2 Lin Zhidong 29
#3 Wei Hongji 26
#4 Liu Shenghou 23
#5 Yang Jian 23
#6 Lin Kechuang 19
#7 Fang Yutao 17
#8 Wang Yong 16
#9 Liu Cheng 15
#10 Ye Nianci 14

Latest patents

Publication Filing date Title
CN112216692A PIN antistatic structure and preparation method thereof
CN112259450A Sectional etching method
CN112038887A Vertical cavity surface emitting laser and preparation method thereof
CN111998805A Carrier of semiconductor equipment and parallelism detection method
CN112019172A Gate drive circuit of gallium nitride device
CN111987156A Epitaxial structure of gallium nitride-based transistor device, preparation method of epitaxial structure and device
CN111929566A Wafer testing method, device and control equipment thereof
CN112103336A SiC power device and manufacturing method thereof
CN111934645A Preparation method of aluminum-copper alloy film layer, surface acoustic wave filter and duplexer
CN111883578A Nitride power device and preparation method thereof
CN112103340A Non-alloy ohmic contact manufacturing method of gallium nitride transistor
CN111883429A Platform manufacturing method of GaAs HBT device and GaAs HBT device
CN111883590A Gallium nitride-based semiconductor device and manufacturing method thereof
CN111769437A Bragg grating, preparation method thereof and distributed feedback laser
CN112038393A Silicon carbide power diode device and preparation method thereof
CN112038398A Preparation method of silicon carbide power diode device
CN112054073A Photodiode with light guide structure and manufacturing method thereof
CN112038336A Nitride device, ESD protection structure thereof and manufacturing method
CN112038400A Method for manufacturing self-aligned double-groove gallium arsenide field effect transistor
CN112038213A Method for growing SiC epitaxial layers on two sides of SiC substrate and application