Learn more

WUXI FLEXSEMI SEMICONDUCTOR TECH CO LTD

Overview
  • Total Patents
    14
  • GoodIP Patent Rank
    118,290
  • Filing trend
    ⇧ 200.0%
About

WUXI FLEXSEMI SEMICONDUCTOR TECH CO LTD has a total of 14 patent applications. It increased the IP activity by 200.0%. Its first patent ever was published in 2016. It filed its patents most often in China. Its main competitors in its focus markets surface technology and coating, measurement and semiconductors are ALTATECH SEMICONDUCTOR, FUSIONAID CO LTD and AIXTRON SE.

Patent filings in countries

World map showing WUXI FLEXSEMI SEMICONDUCTOR TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 14

Patent filings per year

Chart showing WUXI FLEXSEMI SEMICONDUCTOR TECH CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Sun Zhengqian 7
#2 Yu Geliang 5
#3 Tang Yang 4
#4 Jiang Jianwei 3
#5 Lin Benhui 3
#6 Xie Pengfei 3
#7 Su Xiao 2
#8 Konstantin Novoselov 2
#9 Zhang Jin 2
#10 Yang Jindong 2

Latest patents

Publication Filing date Title
CN111560604A Vertical spraying device for spraying type gas inlet CVD
CN111560603A Spraying type air inlet CVD dynamic gas mixing device
CN110079792A Bilateral symmetry formula CVD system
CN110066989A The grower of high-quality two-dimensional material
CN109901280A A kind of objective table with vacuum suction and heating function
CN108062069A For the control system of molybdenum disulfide CVD equipment
CN108103481A Substrate holds formula quartz boat under the arm automatically
CN108051579A portable AIDS saliva detector
CN106813097A Dewar structure with detection and safeguard protection
CN106198674A A kind of mesoporous Graphene preparation technology and based on mesoporous graphene field effect transistor biosensor
CN106226377A A kind of field-effect transistor biosensor based on Graphene and preparation method thereof
CN105734528A Growth method for layered molybdenum disulfide films on basis of pulse airflow method
CN105609561A Graphene radio frequency transistor and manufacturing method therefor
CN105676259A Scintillator detector based on molybdenum disulfide transistor and manufacturing method thereof