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UNITED SILICON CARBIDE INC

Overview
  • Total Patents
    69
  • GoodIP Patent Rank
    21,805
  • Filing trend
    ⇩ 37.0%
About

UNITED SILICON CARBIDE INC has a total of 69 patent applications. It decreased the IP activity by 37.0%. Its first patent ever was published in 2002. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and EPO (European Patent Office). Its main competitors in its focus markets semiconductors, basic communication technologies and electrical machinery and energy are SOENO AKITAKA, TRANSPHORM INC and HITACHI COMPUTER ENG.

Patent filings in countries

World map showing UNITED SILICON CARBIDE INCs patent filings in countries

Patent filings per year

Chart showing UNITED SILICON CARBIDE INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Bhalla Anup 55
#2 Li Zhongda 20
#3 Alexandrov Peter 15
#4 Fursin Leonid 12
#5 Li Xueqing 12
#6 Zhang Hao 3
#7 Hostetler John L 3
#8 Zhao Jian Hui 1
#9 Huang Xing 1
#10 Simon William Kurt 1

Latest patents

Publication Filing date Title
US10673396B1 Series-connected FETs in active linear mode
US2020135565A1 Reusable wide bandgap semiconductor substrate
WO2018187651A1 Planar multi-implanted jfet
WO2018132458A1 Trench vertical jfet with ladder termination
US2018102326A1 Perimeter Control Of Crack Propagation In Semiconductor Wafers
WO2018048972A1 Trench vertical jfet with improved threshold voltage control
US2017213917A1 Planar multi-implanted JFET
US2017256642A1 Tunneling field effect transistor
US2017133518A1 Trench vertical JFET with ladder termination
US2017125394A1 Wide Bandgap Junction Barrier Schottky Diode With Silicon Bypass
US2016380117A1 Trench vertical JFET with improved threshold voltage control
US9866213B1 High voltage switch module
US9716057B1 Offset leadframe cascode package
US2017117418A1 Planar triple-implanted JFET
US2017018657A1 Vertical jfet made using a reduced mask set
US9324807B1 Silicon carbide MOSFET with integrated MOS diode
US2017213908A1 Self-aligned shielded-gate trench mos-controlled silicon carbide switch with reduced miller capacitance and method of manufacturing the same
US2016268446A1 Trench vertical jfet with improved threshold voltage control
WO2015120432A1 Trenched and implanted bipolar junction transistor
CN106165084A Single-chip integration cascaded switch