|
US2010000681A1
|
|
Phase change based heating element system and method
|
|
JP2006287221A
|
|
Neutralization of systematic poisoning in wafer treatment
|
|
JP2006313882A
|
|
Isothermal control of process chamber
|
|
WO2006104669A2
|
|
High pressure fourier transform infrared cell
|
|
WO2006091316A2
|
|
Improved rinsing step in supercritical processing
|
|
US2006225811A1
|
|
Gate valve for plus-atmospheric pressure semiconductor process vessels
|
|
US2005227187A1
|
|
Ionic fluid in supercritical fluid for semiconductor processing
|
|
US2006102282A1
|
|
Method and apparatus for selectively filtering residue from a processing chamber
|
|
WO2004104697A2
|
|
Decontamination of supercritical wafer processing equipment
|
|
WO2004073036A2
|
|
High-pressure processing chamber for a semiconductor wafer
|
|
AU2003297212A1
|
|
Fluoride in supercritical fluid for photoresist and residue removal
|
|
US2005067002A1
|
|
Processing chamber including a circulation loop integrally formed in a chamber housing
|
|
US2005035514A1
|
|
Vacuum chuck apparatus and method for holding a wafer during high pressure processing
|
|
US2005034660A1
|
|
Alignment means for chamber closure to reduce wear on surfaces
|
|
US2005022850A1
|
|
Regulation of flow of processing chemistry only into a processing chamber
|
|
US2008109509A1
|
|
Computer architecture for communicating between objects
|
|
US2004177867A1
|
|
Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal
|
|
AU2003226048A1
|
|
Method of treatment of porous dielectric films to reduce damage during cleaning
|
|
WO03077032A1
|
|
Method of passivating of low dielectric materials in wafer processing
|
|
AU2003215238A1
|
|
Pressure enchanced diaphragm valve
|
