|
CN111755503A
|
|
Variable transverse doping terminal structure and manufacturing method thereof
|
|
CN111755502A
|
|
Trench RC-IGBT device structure and manufacturing method thereof
|
|
CN111250814A
|
|
Heat dissipation base plate embossing package device
|
|
CN111244171A
|
|
Trench RC-IGBT device structure and manufacturing method thereof
|
|
CN110867419A
|
|
Full-bridge power module
|
|
CN109449134A
|
|
A kind of automobile-used grade high-reliability power module
|
|
CN108565284A
|
|
A kind of inverse conductivity type IGBT of trench gate field cut-off
|
|
CN106910692A
|
|
The power terminal and application method of a kind of pressure contact connection
|
|
CN106684074A
|
|
Novel pressure welding type power module
|
|
CN106817881A
|
|
A kind of power semiconductor modular and preparation method thereof
|
|
CN105679691A
|
|
Detection method for connection quality of power module
|
|
CN105655306A
|
|
Double-side welding and single-side heat radiation power module integrated on heat radiation substrate
|
|
CN105679747A
|
|
Power module with dual-layer encapsulating adhesive used for elastic sheets and manufacturing method for power module
|
|
CN104934402A
|
|
Terminal used for power module
|
|
CN105140193A
|
|
Power module welding structure of copper-clad ceramic heat radiation substrate
|
|
CN104867887A
|
|
Two-layer encapsulated power module and packaging method
|
|
CN104900546A
|
|
Packaging structure of power module
|
|
CN104900617A
|
|
Internal connection structure of power semiconductor module
|
|
CN104867888A
|
|
High-heat-dissipation SiC power module
|
|
CN104952807A
|
|
Power semiconductor module adaptable to PCBs (printed circuit boards) in different thicknesses
|
