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SII NANOTECHNOLOGY INC

Overview
  • Total Patents
    703
About

SII NANOTECHNOLOGY INC has a total of 703 patent applications. Its first patent ever was published in 1994. It filed its patents most often in Japan, United States and China. Its main competitors in its focus markets measurement, electrical machinery and energy and optics are HITACHI HIGH-TECH SCIENCE CORP, HITACHI HIGH TECH SCIENCE CORP and 1ST DETECT CORP.

Patent filings per year

Chart showing SII NANOTECHNOLOGY INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Takaoka Osamu 91
#2 Yasutake Masatoshi 52
#3 Tashiro Junichi 45
#4 Fujii Toshiaki 44
#5 Iyogi Masato 37
#6 Ogawa Takashi 37
#7 Watanabe Kazutoshi 35
#8 Matoba Yoshiki 31
#9 Tanaka Keiichi 30
#10 Sugiyama Yasuhiko 24

Latest patents

Publication Filing date Title
JP2012074396A Charged particle beam device
JP2013053996A Method for specifying spring constant of cantilever and scanning probe microscope adopting the method
JP2013036805A Transmission x-ray analyzing apparatus and method
JP2013036793A X-ray analyzing apparatus and method
JP2011215168A Method for detecting displacement of scanning probe microscope
JP2011227097A Method for aligning spot light position of optical displacement detection mechanism and scanning probe microscope using the same
JP2011247899A Displacement detection method of scanning probe microscope
JP2011203266A Thin sample preparing method
JP2012033467A Charged particle beam device and sample processing method
CN102235977A ICP analysis device and analysis method thereof
JP2012204156A X-ray tube and x-ray analysis device
JP2012202840A Adhesion tester
JP2012202841A Vibration characteristic measurement method for cantilever
JP2012202842A Sample positioning method, and thermal analyzer using the same
JP2012189399A X-ray analysis apparatus
JP2012185037A Friction force microscope
JP2012184959A Displacement detection mechanism and scanning probe microscope having the same
JP2012181107A Method and device for evaluating mechanical characteristic
JP2011233509A Emitter of field ionization type ion source, focused ion beam device and focused ion beam irradiation method
JP2012181048A Viscoelasticity measurement device