|
CN112164654A
|
|
Power device integrated with Schottky diode and manufacturing method thereof
|
|
CN112164653A
|
|
Power device and manufacturing method thereof based on self-alignment process
|
|
CN112071913A
|
|
Silicon carbide planar gate MOSFET cell structure and manufacturing method
|
|
CN112071813A
|
|
Integrated circuit chip heat radiation structure
|
|
CN111755413A
|
|
High-thermal-conductivity silicon carbide device packaging structure and method
|
|
CN111653484A
|
|
Method for optimizing silicon carbide MOSFET self-alignment process
|
|
CN111463177A
|
|
Power module and application method thereof
|
|
CN111128898A
|
|
Crimping type SiC power module packaging structure
|
|
CN106876446A
|
|
A kind of high-power groove fence gate level T MOSFET structure designs
|
|
CN106876445A
|
|
A kind of high-power planar grid D MOSFET structures design
|
|
CN106876470A
|
|
A kind of trench gate metal oxide field-effect transistor and its manufacture method
|
