|
CN112289850A
|
|
Preparation method of split-gate MOSFET device and split-gate MOSFET device
|
|
CN112271136A
|
|
Preparation method of trigger type silicon controlled rectifier device and rectifying device
|
|
CN112259597A
|
|
TVS device
|
|
CN111863623A
|
|
Preparation method of multilayer super junction semiconductor device
|
|
CN111769157A
|
|
High density trench device structure and method of making same
|
|
CN111863940A
|
|
Bidirectional large-through-flow low-residual-voltage TVS device
|
|
CN111627813A
|
|
Silicon controlled rectifier device and manufacturing method thereof
|
|
CN111522383A
|
|
Dynamic bias current boosting method applied to ultra-low power LDO (low dropout regulator)
|
|
CN111506144A
|
|
Low-power consumption method applied to L DO
|
|
CN111446231A
|
|
Integrated multi-pin overvoltage protection device
|
|
CN111478281A
|
|
Overvoltage protection circuit
|
|
CN111478300A
|
|
Foldback overcurrent protection circuit
|
|
CN111490775A
|
|
Low-power-consumption circuit for selecting signal port through trimming
|
|
CN111446233A
|
|
3D packaging structure and method for realizing packaging of oversized TVS chip area
|
|
CN111522390A
|
|
Method for effectively improving transient response speed
|
|
CN111474974A
|
|
Method for improving L DO transient response when sudden change from heavy load to light load or no load
|
|
CN111446241A
|
|
Low-capacitance high-power transient voltage suppressor and manufacturing method thereof
|
|
CN111446300A
|
|
Split gate MOSFET structure with thickness of inter-gate isolation medium not affected by thickness of gate oxide and preparation method thereof
|
|
CN111446239A
|
|
Low-capacitance low-clamping voltage transient voltage suppressor and manufacturing method thereof
|
|
CN111370383A
|
|
TVS product with ultrathin appearance and manufacturing method thereof
|
