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SHANGHAI HUAHONG NEC ELECT CO

Overview
  • Total Patents
    1,777
About

SHANGHAI HUAHONG NEC ELECT CO has a total of 1,777 patent applications. Its first patent ever was published in 2003. It filed its patents most often in China and United States. Its main competitors in its focus markets semiconductors, environmental technology and electrical machinery and energy are SMIC INTERNATIONAL IC MFG SHANGHAI CO LTD, INST OF MICROELECTRONICS CAS and INVENSYS CORP.

Patent filings in countries

World map showing SHANGHAI HUAHONG NEC ELECT COs patent filings in countries
# Country Total Patents
#1 China 1,748
#2 United States 29

Patent filings per year

Chart showing SHANGHAI HUAHONG NEC ELECT COs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Qian Wensheng 111
#2 Wensheng Qian 92
#3 Hu Jun 79
#4 Liu Donghua 69
#5 Hualun Chen 64
#6 Duan Wenting 58
#7 Yu Chen 58
#8 Shi Jing 54
#9 Xiao Luo 54
#10 Tao Xiong 54

Latest patents

Publication Filing date Title
CN103050541A Radio frequency LDMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof
CN103050387A Ion implantation method for silicon back surface
CN103050539A Terminal protection structure of super junction device
CN103050523A Insulated gate bipolar transistor and manufacturing method thereof
CN103050389A Growing method of low-stress IGBT (Insulated Gate Bipolar Transistor) groove type grid electrode
CN103050537A Radio frequency lateral double-diffused field effect transistor and manufacturing method thereof
CN103035731A Field effect transistor of radio frequency lateral double-diffusion and preparation method thereof
CN103035730A Radio frequency laterally diffused metal oxide semiconductor (LDMOS) device and manufacturing method thereof
CN103050522A Lateral parasitic PNP triode in SiGe heterojunction bipolar transistor (HBT) process and manufacturing method for lateral parasitic PNP triode
CN103050536A Radio frequency LDMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof
CN103035728A Literally diffused metal oxide semiconductor (LDMOS) device applied to radio frequency field and manufacturing method thereof
CN103035751A Schottky diode
CN103035489A Method for precisely controlling thinning of wafer
CN103035727A Radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component and manufacture method
US2014124838A1 High speed SiGe HBT and manufacturing method thereof
CN103035487A Groove manufacturing method capable of improving silicon slice warping degree
CN103035488A Formation method of groove-shaped semiconductor structure
CN103035693A Field stop type insulated gate bipolar transistor and manufacturing methods thereof
CN103035521A Process method for achieving minor carrier storage layer groove-type insulated gate bipolar translator (IGBT)
CN103035724A Radio frequency horizontal double-diffusion-field effect transistor and manufacturing method thereof