CN103050541A
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Radio frequency LDMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof
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CN103050387A
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Ion implantation method for silicon back surface
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CN103050539A
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Terminal protection structure of super junction device
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CN103050523A
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Insulated gate bipolar transistor and manufacturing method thereof
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CN103050389A
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Growing method of low-stress IGBT (Insulated Gate Bipolar Transistor) groove type grid electrode
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CN103050537A
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Radio frequency lateral double-diffused field effect transistor and manufacturing method thereof
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CN103035731A
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Field effect transistor of radio frequency lateral double-diffusion and preparation method thereof
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CN103035730A
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Radio frequency laterally diffused metal oxide semiconductor (LDMOS) device and manufacturing method thereof
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CN103050522A
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Lateral parasitic PNP triode in SiGe heterojunction bipolar transistor (HBT) process and manufacturing method for lateral parasitic PNP triode
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CN103050536A
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Radio frequency LDMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof
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CN103035728A
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Literally diffused metal oxide semiconductor (LDMOS) device applied to radio frequency field and manufacturing method thereof
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CN103035751A
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Schottky diode
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CN103035489A
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Method for precisely controlling thinning of wafer
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CN103035727A
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Radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component and manufacture method
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US2014124838A1
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High speed SiGe HBT and manufacturing method thereof
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CN103035487A
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Groove manufacturing method capable of improving silicon slice warping degree
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CN103035488A
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Formation method of groove-shaped semiconductor structure
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CN103035693A
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Field stop type insulated gate bipolar transistor and manufacturing methods thereof
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CN103035521A
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Process method for achieving minor carrier storage layer groove-type insulated gate bipolar translator (IGBT)
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CN103035724A
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Radio frequency horizontal double-diffusion-field effect transistor and manufacturing method thereof
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