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SHANGHAI HONGLI SEMICONDUCTOR

Overview
  • Total Patents
    37
About

SHANGHAI HONGLI SEMICONDUCTOR has a total of 37 patent applications. Its first patent ever was published in 2002. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, electrical machinery and energy and computer technology are POWERCHIP SEMICONDUCTOR CORP, KATSUMATA RYOTA and CHENGDU ANALOG CIRCUIT TECH INC.

Patent filings in countries

World map showing SHANGHAI HONGLI SEMICONDUCTORs patent filings in countries
# Country Total Patents
#1 China 37

Patent filings per year

Chart showing SHANGHAI HONGLI SEMICONDUCTORs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Gao Rongzheng 8
#2 Jin Pingzhong 5
#3 Cai Mengjin Jin 2
#4 Xu Yunjun 2
#5 Tao Xiong 1
#6 Leng Dexue 1
#7 Zheng Wang 1
#8 Dexue Leng 1
#9 Xie Liu 1
#10 Xu Xianglun Yu 1

Latest patents

Publication Filing date Title
CN101540320A Static discharge protection diode
CN101067729A Method for photoetching glue soluting cleaning filter bubble
CN101067728A Photoetching error computing method
CN101286471A Polluting device for anti-slipping sheet
CN1787546A Personal movable apparatus with luminous assembly and manufacture method thereof
CN1786105A Organic electro-luminescent material and its electro luminescent device
CN1744281A Method for improving source/drain electrode ion doping contour
CN1744288A Method for forming dual oxide layer
CN1744276A Method for forming polycrystalline silicon with ruogh surface
CN1744282A Method for forming smaller contact hole using T-type pattern
CN1744291A Uncrystallizing method for avoiding leakage of super shallow junction
CN1743504A Method for improving reaction room performance
CN1610079A Method for removing photoresist after etching metal layer
CN1610008A Sensing amplifier for photoetching read-only memory
CN1610063A Method for forming grid structure
CN1610090A Double-mosaic producing process capable of simplifing production
CN1610096A Method for forming polycrystalline silicon capacitor utilizing self-aligning metal silicide producing process
CN1610093A Semiconductor structure for avoiding polycrystalline silicon stringer formation in semiconductor production
CN1610089A Method for producing shallow ridge isolation structure to improve smiling effect
CN1591865A High-power RF integrated circuit capable of blocking parasitic loss current and its mfg. method