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SHANGHAI ADVANCED SEMICONDUCTOR MFG CO LTD

Overview
  • Total Patents
    26
About

SHANGHAI ADVANCED SEMICONDUCTOR MFG CO LTD has a total of 26 patent applications. Its first patent ever was published in 2006. It filed its patents most often in China. Its main competitors in its focus markets semiconductors are ADVANCED EPITAXY TECHNOLOGY IN, YOSHIDA ISAMU and CHIPMOS TECHNOLOGIES INC CHIPM.

Patent filings in countries

World map showing SHANGHAI ADVANCED SEMICONDUCTOR MFG CO LTDs patent filings in countries
# Country Total Patents
#1 China 26

Patent filings per year

Chart showing SHANGHAI ADVANCED SEMICONDUCTOR MFG CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Jianhua Liu 5
#2 Kai Shao 5
#3 Dawei Gong 4
#4 Zhang Ting 3
#5 Qingjie Ma 3
#6 Xiaoli Wu 3
#7 Xuemeng Chen 3
#8 Yang Haibo 3
#9 Yanhong Zhang 2
#10 Zhifeng Xie 2

Latest patents

Publication Filing date Title
CN102446733A Power device with high-voltage radio-frequency lateral diffusion structure and production method of power device
CN102394221A 60 volts high voltage LDPMOS structure and manufacture method thereof
CN102408093A Manufacturing method of isolated cavity
CN102339916A Bonding method and packaging method for light-emitting diode (LED) chip and silicon substrate
CN102339755A High-voltage N-type junction field effect transistor and manufacturing method thereof
CN102306663A JEET (junction field-effect transistor) and formation method thereof
CN102306661A LDMOS (laterally diffused metal oxide semiconductor) transistor structure and formation method thereof
CN102344113A Method for etching device deep slot with metal sensitive interlayer
CN102339864A LDMOS (laterally diffused metal oxide semiconductor) transistor structure and forming method thereof
CN102303842A Pre-packaging method of cover plate compatible with semiconductor process
CN102303844A MEMS (micro electro mechanical system) apparatus and forming method thereof
CN102254830A DEPMOS (Drain Expansion P-type Metal Oxide Semiconductor) transistor and forming method thereof
CN102254933A PN junction isolating structure and forming method thereof
CN102275867B Semiconductor device with partially sealed shell and manufacturing method of semiconductor device
CN102254806A Method for double-grid oxide layer in BCD (Bipolar, COMS and DMOS) process
CN102201345A Production method of termination structure used for deep-trench super junction MOS (Metal Oxide Semiconductor) device
CN102214581A Method for manufacturing terminal structure of deep-groove super-junction metal oxide semiconductor (MOS) device
CN102214583A Deep-trough high-voltage terminal structure manufacturing method and high-voltage semiconductor device
CN102201446A Grounded-grid NMOS (N-channel metal oxide semiconductor) unit for antistatic protection and antistatic protection structure thereof
CN102184895A Side wall of high-voltage complementary metal-oxide-semiconductor transistor (CMOS) device and manufacturing method thereof