Apparatus and method for improved thermal coupling of a semiconductor package to a cooling plate and increased electrical coupling of package leads on more than one side of the package to a circuit board
FR2608634A1
Process and device for chemical deposition in plasma-activated vapour phase
EP0275508A1
Method for making CMOS devices
US4843253A
Monolithically integratable circuit for the generation of extremely short duration current pulses
EP0273882A2
An integrating coupling circuit for coupling a modulator to a ceramic filter, useful with amplitude modulation receivers
GB8728966D0
Power transistor with improved resistance to direct secondary breakdown
US4868422A
TTL compatible CMOS logic circuit for driving heavy capacitive loads at high speed
GB8728199D0
A coupling circuit for use between a modulator and a ceramic filter in amplitude modulation receivers
IT8722789D0
Furnace gas flow tester device for the production of semiconductor electric devices
EP0271749A2
Process for the manufacture of an integrated electronic device, in particular a CMOS device, with segregation of metallic impurities
GB8727610D0
Cmos logic circuit
US4874965A
Circuital device for the power-on reset of digital integrated circuits in MOS technology
EP0267808A2
Telephone circuit for supplying ringing signals to a subscriber telephone line and for detecting unhooking
EP0273470A2
Method for decontamination of a chamber used in vacuum processes for deposition, etching and/or growth of high purity films, particularly applicable to semiconductor technology
EP0265958A2
Process of making insulated- gate field-effect transistors
US4839768A
Protection of integrated circuits from electrostatic discharges
EP0267882A1
Monolithic integration of isolated, high performance, power vdmos transistors and of high voltage p-channel mos transistors together with cmos, npn, pnp transistors and low leakage diodes
US4807018A
Method and package for dissipating heat generated by an integrated circuit chip
EP0268315A2
EEPROM memory cell with a single polysilicon level and a tunnel oxide zone
DE3734631A1
Differential amplifier using MOS transistors of a single channel polarity
