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EFCIS

Overview
  • Total Patents
    202
About

EFCIS has a total of 202 patent applications. Its first patent ever was published in 1978. It filed its patents most often in France, EPO (European Patent Office) and United States. Its main competitors in its focus markets basic communication technologies, semiconductors and computer technology are NAT SEMICONDUCTOR CORP, TEXAS INTRUMENTS INC and FASELEC AG.

Patent filings per year

Chart showing EFCISs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Caillon Christian 19
#2 Borel Joseph 16
#3 Tallaron Louis 11
#4 Dubois Guy 11
#5 Terrier Christian 10
#6 Baudrant Annie 10
#7 Fensch Thierry 10
#8 Gris Yvon 9
#9 Brice Jean-Michel 9
#10 Sokoloff Boris 8

Latest patents

Publication Filing date Title
FR2608808A1 Integrated circuit for digital signal processing
FR2608802A1 Integrated signal processing circuit for online and column summation of digital value matrices
FR2607641A1 Digital rank k filter and corresponding filtering method
FR2607644A1 Digital-to-analog converter for video image generation circuit
FR2606960A1 DIGITAL SIGNAL TRANSMISSION CIRCUIT FOR A TELEPHONE NETWORK
FR2604835A1 High gain switched capacity amplifier
FR2604834A1 Double alternation rectifier with switched capacities
FR2604840A1 Differential analog-to-digital converter with switched capacities
FR2602073A1 Digital signal processing circuit carrying out cosinus transformation.
FR2597278A1 LOW-PASS FILTER CELL FOR INTEGRATED CIRCUIT
FR2595870A1 Integrated circuit with drowned macrocells in a sea of prediffused doors and manufacturing method
US4731318A Integrated circuit comprising MOS transistors having electrodes of metallic silicide and a method of fabrication of said circuit
FR2591402A1 SINUSOIDAL OSCILLATOR WITH VERY LOW DISTORTION
FR2587841A1 Semiconductor power component and related control logic
FR2583203A1 Dead memory with optimized line capacity and method for encoding such a memory
FR2583182A1 Retention propagation adder with preload
FR2582445A1 Method for manufacturing metal silicide electrode mos transistors
FR2581248A1 Method for manufacturing field-effect transistors and lateral bipolar transistors on the same substrate
FR2580262A1 Installation for handling fragile objects in a dust-controlled atmosphere
FR2578125A1 Static bistable switch in cmos technology