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PN JUNCTION SEMICONDUCTOR HANGZHOU CO LTD

Overview
  • Total Patents
    12
  • GoodIP Patent Rank
    137,652
About

PN JUNCTION SEMICONDUCTOR HANGZHOU CO LTD has a total of 12 patent applications. Its first patent ever was published in 2018. It filed its patents most often in China. Its main competitors in its focus markets semiconductors are ANHUI ASKY QUANTUM TECHNOLOGY CO LTD, SICHUAN LONGRUI MICROELECTRONICS CO LTD and SHENGKAI SCIENCE & TECH CO LTD.

Patent filings in countries

World map showing PN JUNCTION SEMICONDUCTOR HANGZHOU CO LTDs patent filings in countries
# Country Total Patents
#1 China 12

Patent filings per year

Chart showing PN JUNCTION SEMICONDUCTOR HANGZHOU CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Huang Xing 12
#2 Chen Xinlu 11
#3 Chen Ran 5
#4 Zhang Zihao 3
#5 Wu Hao 2
#6 Tong Junhong 1

Latest patents

Publication Filing date Title
CN112186027A Silicon carbide MOSFET with grid groove structure
CN111933698A Field effect transistor with same grid source doping and cellular structure
CN111509037A Silicon carbide MOS device with groove type JFET and preparation process thereof
CN111697060A Multi-channel silicon carbide JFET structure with grooves and preparation process thereof
CN111509034A Field effect transistor with same gate source doping, cell structure and preparation method
CN111463120A Channel inclined injection preparation method of silicon carbide MOSFET
CN110473872A A kind of carbide MOS devices with majority carrier diode
CN110379861A A kind of silicon carbide heterojunction diode power device
CN110379863A A kind of silicon carbide junction barrier schottky diodes
CN110137268A A kind of high-voltage diode with trench electrode
CN109560122A A kind of high pressure broad stopband diode chip for backlight unit with groove structure
CN109216464A A kind of carbide MOS devices with heterojunction diode