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PILLARISETTY RAVI

Overview
  • Total Patents
    35
  • GoodIP Patent Rank
    198,467
About

PILLARISETTY RAVI has a total of 35 patent applications. Its first patent ever was published in 2007. It filed its patents most often in United States and China. Its main competitors in its focus markets semiconductors, micro-structure and nano-technology and computer technology are OPTOPAC INC, GRAPHIC TECHNO JAPAN CO LTD and VERTICLE INC.

Patent filings in countries

World map showing PILLARISETTY RAVIs patent filings in countries
# Country Total Patents
#1 United States 34
#2 China 1

Patent filings per year

Chart showing PILLARISETTY RAVIs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Pillarisetty Ravi 35
#2 Radosavljevic Marko 23
#3 Dewey Gilbert 18
#4 Kavalieros Jack T 18
#5 Chu-Kung Benjamin 17
#6 Rachmady Willy 16
#7 Mukherjee Niloy 13
#8 Chau Robert S 12
#9 Then Han Wui 8
#10 Le Van H 7

Latest patents

Publication Filing date Title
US2014203327A1 Deep gate-all-around semiconductor device having germanium or group III-V active layer
US2014168355A1 Wearable imaging sensor for communications
US2014138713A1 Passivation layer for flexible display
US2014091360A1 Trench confined epitaxially grown device layer(s)
US2014084246A1 Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer
US2012280210A1 Vertical tunneling negative differential resistance devices
US2011156005A1 Germanium-based quantum well devices
US2011147711A1 Non-planar germanium quantum well devices
US2010327317A1 Germanium on insulator using compound semiconductor barrier layers
US2010230658A1 Apparatus and methods for improving parallel conduction in a quantum well device
US2010213441A1 Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same
US2010032763A1 Multiple-gate transistors and processes of making same
US2009242873A1 Semiconductor heterostructures to reduce short channel effects
US2009242872A1 Double quantum well structures for transistors
US2009206404A1 Reducing external resistance of a multi-gate device by silicidation
US2009166743A1 Independent gate electrodes to increase read stability in multi-gate transistors