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SUZHOU NANOWIN SCIENCE AND TECHNOLOGY CO LTD

Overview
  • Total Patents
    13
  • GoodIP Patent Rank
    209,112
About

SUZHOU NANOWIN SCIENCE AND TECHNOLOGY CO LTD has a total of 13 patent applications. Its first patent ever was published in 2008. It filed its patents most often in China. Its main competitors in its focus markets semiconductors and environmental technology are SCHMID YAYA TECHNOLOGY CO LTD, SOLAROUND LTD and TIANJIN SAN AN OPTOELECTRONICS CO LTD.

Patent filings in countries

World map showing SUZHOU NANOWIN SCIENCE AND TECHNOLOGY CO LTDs patent filings in countries
# Country Total Patents
#1 China 13

Patent filings per year

Chart showing SUZHOU NANOWIN SCIENCE AND TECHNOLOGY CO LTDs patent filings per year from 1900 to 2020

Focus industries

Top inventors

# Name Total Patents
#1 Jianfeng Wang 8
#2 Ke Xu 7
#3 Xu Ke 5
#4 Wang Jianfeng 5
#5 Guoqiang Ren 4
#6 Gengzhao Xu 3
#7 Zhenghui Liu 3
#8 Haijian Zhong 3
#9 Yingmin Fan 3
#10 Demin Cai 3

Latest patents

Publication Filing date Title
CN105097893A III-nitride substrate and preparation process
CN104900779A Surface structure of III-V semiconductor monocrystalline substrate after hole removing and preparation method thereof
CN104979377A III nitride/foreign substrate composite template and preparation method thereof
CN102720851A Gate valve
CN102201503A III-nitride substrate growing method, substrate and LED (light emitting diode)
CN102181924A Growth method of graphene and graphene
CN102185043A Light-emitting diode and preparation method thereof, and solar cell and preparation method thereof
CN102163545A Method for manufacturing micro-column array, array structure and method for growing crystalline material
CN102064189A Metal-semiconductor electrode structure and preparation method thereof
CN101760772A Reaction unit for ammonia thermal growth of nitride
CN102034764A Substrate with self-stripping function and method for stripping epitaxial layer
CN101378017A Growth method for epitaxial layer on silicon-based graphical substrate
CN101378008A Method for separating epitaxial layer and substrate