| # | Country | Total Patents | |
|---|---|---|---|
| #1 | Republic of Korea | 5 | |
| #2 | China | 4 | |
| #3 | EPO (European Patent Office) | 4 | |
| #4 | France | 4 | |
| #5 | WIPO (World Intellectual Property Organization) | 4 | |
| #6 | Taiwan | 1 | |
| #7 | United States | 1 |
| # | Industry | |
|---|---|---|
| #1 | Semiconductors | |
| #2 | Basic communication technologies |
| # | Technology | |
|---|---|---|
| #1 | Semiconductor devices | |
| #2 | Code conversion |
| # | Name | Total Patents |
|---|---|---|
| #1 | Lahreche Hacene | 18 |
| #2 | Bove Phillipe | 4 |
| #3 | Hacene Lahreche | 3 |
| #4 | Nuyen Linh T | 2 |
| Publication | Filing date | Title |
|---|---|---|
| CN101878533A | Electronic device with controlled electrical field | |
| FR2929445A1 | PROCESS FOR PRODUCING A GALLIUM NITRIDE LAYER OR GALLIUM NITRIDE AND ALUMINUM | |
| FR2924270A1 | METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE | |
| FR2914500A1 | IMPROVED OHMICALLY CONTACT ELECTRONIC DEVICE | |
| WO2006030014A1 | Hemt piezoelectric structures with zero alloy disorder |