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NOVA CRYSTALS INC

Overview
  • Total Patents
    32
About

NOVA CRYSTALS INC has a total of 32 patent applications. Its first patent ever was published in 1998. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and Taiwan. Its main competitors in its focus markets semiconductors, environmental technology and optics are SUMITOMO ELECTRIC DEVICE INNOV, LUMEI OPTOELECTRONICS CORP and LEBBY MICHAEL.

Patent filings per year

Chart showing NOVA CRYSTALS INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Lo Yu-Hwa 32
#2 Zhu Zuhua 17
#3 Ng Tuoh-Bin 7
#4 Ejeckam Felix 6
#5 Ji Chen 4
#6 Zhang Jizhi 4
#7 Li Chen 3
#8 Ejeckam Felix E 3
#9 Lin Chenting 2
#10 Pauchard Alexandre 2

Latest patents

Publication Filing date Title
US6806114B1 Broadly tunable distributed bragg reflector structure processing
US2002066938A1 Hetero-interface avalance photodetector
TW508884B Surface-emitting laser devices with integrated beam-shaping optics and power-monitoring detectors
WO0193385A2 Surface-emitting laser devices with integrated beam-shaping optics and power-monitoring detectors
US2002048900A1 Method for joining wafers at a low temperature and low stress
WO0173859A1 Enhanced-output light emitting diode and method of making the same
US6459716B1 Integrated surface-emitting laser and modulator device
US2002101898A1 Wavelength-tunable semiconductor laser diode
US2002070125A1 Method for lift-off of epitaxially grown semiconductors by electrochemical anodic etching
US6384462B1 Planar hetero-interface photodetector
US2002068373A1 Method for fabricating light emitting diodes
WO0139285A2 Nanostructure light emitters using plasmon-photon coupling
WO0065667A1 Led having embedded light reflectors to enhance led output efficiency
WO0054342A1 HIGH BRIGHTNESS NITRIDE-BASED LEDs
EP1155443A1 Heteroepitaxial growth with thermal expansion and lattice mismatch
WO0045443A1 High performance light emitting diodes
WO0033363A1 Method for joining dissimilar semiconductor wafers
US6199748B1 Semiconductor eutectic alloy metal (SEAM) technology for fabrication of compliant composite substrates and integration of materials
US6329063B2 Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates