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NONVOLATILE ELECTRONICS INC

Overview
  • Total Patents
    55
About

NONVOLATILE ELECTRONICS INC has a total of 55 patent applications. Its first patent ever was published in 1991. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and EPO (European Patent Office). Its main competitors in its focus markets semiconductors, micro-structure and nano-technology and measurement are NVE CORP, SASAKI TOMOYUKI and KAPPA NUMERICS INC.

Patent filings per year

Chart showing NONVOLATILE ELECTRONICS INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Daughton James M 33
#2 Pohm Arthur V 27
#3 Hermann Theodore M 14
#4 Everitt Brenda A 8
#5 Fayfield Robert T 5
#6 Stokes John F 5
#7 Black William C Jr 4
#8 Tondra Mark C 4
#9 Templeton Alexander 2
#10 Lange Erik H 2

Latest patents

Publication Filing date Title
WO0127592A1 Magnetizable bead detector
AU7846400A Magnetic digital signal coupler monitor
US6147900A Spin dependent tunneling memory
US6275411B1 Spin dependent tunneling memory
EP1754979A1 Magnetic digital signal coupler
US6300617B1 Magnetic digital signal coupler having selected/reversal directions of magnetization
US6072382A Spin dependent tunneling sensor
US6021065A Spin dependent tunneling memory
US5966322A Giant magnetoresistive effect memory cell
US6340886B1 Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surface
US5729137A Magnetic field sensors individualized field reducers
US5949707A Giant magnetoresistive effect memory cell
US5831426A Magnetic current sensor
US5617071A Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses
WO9503604A1 Magnetic structure with stratified layers
US5569544A Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components
WO9411889A1 Magnetoresistive structure with alloy layer
US5420819A Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage
US5251170A Offset magnetoresistive memory structures