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NO 55 INST CN ELECT SCI & TECH

Overview
  • Total Patents
    336
  • GoodIP Patent Rank
    7,465
  • Filing trend
    ⇩ 100.0%
About

NO 55 INST CN ELECT SCI & TECH has a total of 336 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 2007. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, optics and surface technology and coating are THE 55TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION, TAKAGI KAZUTAKA and DYNAX SEMICONDUCTOR INC.

Patent filings in countries

World map showing NO 55 INST CN ELECT SCI & TECHs patent filings in countries
# Country Total Patents
#1 China 336

Patent filings per year

Chart showing NO 55 INST CN ELECT SCI & TECHs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Chen Tangsheng 22
#2 Fan Weihua 20
#3 Zhu Jian 20
#4 Wang Xufeng 20
#5 Cheng Wei 19
#6 Hong Yiyou 19
#7 Zhou Jianjun 19
#8 Li Zhonghui 18
#9 Kong Cen 17
#10 Bai Song 17

Latest patents

Publication Filing date Title
CN106876378A A kind of plural layers integrated passive devices and its manufacture method
CN106652923A High-stability and wide-range brightness adjusting method for LED backlight, and high-stability and wide-range LED backlight driving circuit
CN106896492A Two-piece type lll night vision eyepiece optical system
CN106887530A The thin-film packing structure and preparation method of a kind of organic electroluminescence device
CN106652959A Silicon-based microdisplay column selection drive method and circuit suitable for high-frequency applications
CN106898638A A kind of SiC schottky diode structure and preparation method for improving surge capacity
CN106785251A Mode transmission ultra-broadband digital phase shifter
CN106684142A Gallium nitride device schottky contact system with composite metal barrier layer
CN106653689A Method for dual-pulse frequency laser separation of composite SiC
CN106711022A Preparation method for growing silicon carbide epitaxial film with clear doping interface
CN106803479A A kind of preparation method of the silicon carbide epitaxial wafer for improving effective area
CN106672892A Method for reducing depressed deformation of sacrificial layer in three-dimensional stacking in chemical mechanical polishing
CN106783847A For the three-dimensional bonding stacked interconnected integrated manufacturing method of radio frequency micro-system device
CN106646971A Method and structure capable of improving heating evenness of liquid crystal screen component
CN106876514A Vacuum semiconductor hybrid optical electric explorer
CN106783623A The two-dimensional material field-effect transistor and its manufacture method of a kind of inverted T shape buried grid structure
CN106783998A A kind of GaN high electron mobility transistor based on diamond substrate and preparation method thereof
CN106783558A A kind of low on-resistance hydrogen terminal diamond field effect transistor and preparation method thereof
CN106711031A Method for reducing effect of base plane dislocation on silicon carbide epitaxial layer
CN106783540A The method for reducing epitaxial wafer surface scratch