WAVICE INC has a total of 18 patent applications. It decreased the IP activity by 85.0%. Its first patent ever was published in 2015. It filed its patents most often in Republic of Korea, WIPO (World Intellectual Property Organization) and China. Its main competitors in its focus markets semiconductors, basic communication technologies and telecommunications are HUNG TZU-CHIEN, KOSTAT SEMICONDUCTOR CO LTD and HSHIEH FWU-IUAN.
# | Country | Total Patents | |
---|---|---|---|
#1 | Republic of Korea | 9 | |
#2 | WIPO (World Intellectual Property Organization) | 6 | |
#3 | China | 1 | |
#4 | EPO (European Patent Office) | 1 | |
#5 | United States | 1 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Basic communication technologies | |
#3 | Telecommunications |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Waveguides | |
#3 | Resonators | |
#4 | Amplifiers |
# | Name | Total Patents |
---|---|---|
#1 | Koo Hwang Sub | 16 |
#2 | Kim Hyun Je | 16 |
#3 | Jung Hee Seok | 16 |
#4 | Lee Sang Min | 14 |
#5 | Jung Youn Kook | 5 |
#6 | Song Myoung Keun | 4 |
#7 | Lim Young Kwang | 2 |
#8 | Kim Jong Wo | 2 |
#9 | Choi Chul Soon | 2 |
#10 | Lee Seok | 1 |
Publication | Filing date | Title |
---|---|---|
KR20190090231A | A high electron mobility transistor(HEMT) including high reliability field plate without crek and method of manufacturing them | |
KR20180068172A | A HEMT and manufacturing method thereof | |
KR20180068152A | A nitride electronic element and manufacturing method thereof | |
KR20180068161A | A nitride electronic element and manufacturing method thereof | |
KR20180065334A | A high electron mobility transistor with roughness formed in the lower part of the substrate and manufacturing method thereof | |
WO2017069460A2 | High electron mobility transistor and manufacturing method therefor | |
KR20180000105A | High frequency power transistor package and thereof method | |
KR20170129457A | High frequency power amplifier | |
KR20170129451A | Internal matching package | |
KR20170078077A | GaN HEMTs having a through hole and method of fabricating same |