MICRO POWER SYSTEMS INC has a total of 12 patent applications. Its first patent ever was published in 1974. It filed its patents most often in United States, Switzerland and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, machines and basic communication technologies are LIWANG ELECTRONIC CO LTD, HUTSON JEARLD L and SEZ SEMICONDUCT EQUIP ZUBEHOER.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 10 | |
#2 | Switzerland | 1 | |
#3 | WIPO (World Intellectual Property Organization) | 1 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Machines | |
#3 | Basic communication technologies | |
#4 | Telecommunications | |
#5 | Computer technology | |
#6 | Surface technology and coating |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Unspecified technologies | |
#3 | Code conversion | |
#4 | Transmission | |
#5 | Coating metallic material | |
#6 | Analogue computers | |
#7 | Tuning resonant circuits |
# | Name | Total Patents |
---|---|---|
#1 | Hall John H | 5 |
#2 | Tasdighi Ali | 3 |
#3 | Rao Raman K | 2 |
#4 | Caruso John M | 2 |
#5 | Levinson Roger A | 2 |
#6 | Huynh Quoi V | 1 |
#7 | Caruso John | 1 |
#8 | Hattori Keisuke | 1 |
#9 | Hall John Haslet | 1 |
#10 | Sabo Alexander R | 1 |
Publication | Filing date | Title |
---|---|---|
US5298814A | Active analog averaging circuit and ADC using same | |
US5294927A | Multi-channel digital to analog converter | |
US5283579A | Digital to analog converter having high multiplying bandwidth | |
US4975386A | Process enhancement using molybdenum plugs in fabricating integrated circuits | |
US4566914A | Method of forming localized epitaxy and devices formed therein | |
US4318118A | Semiconductor structure and method | |
US4265935A | High temperature refractory metal contact assembly and multiple layer interconnect structure | |
US4247951A | Frequency synthesizer with unauthorized frequency inhibiting means | |
US4042953A | High temperature refractory metal contact assembly and multiple layer interconnect structure | |
CH604373A5 | Interconnect structure for integrated circuit | |
US3883889A | Silicon-oxygen-nitrogen layers for semiconductor devices |