ITT GALLIUM ARSENIDE TECH has a total of 15 patent applications. Its first patent ever was published in 1984. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, machines and basic communication technologies are SIZARY LTD, PARADIGM TECHNOLOGY INC and HUTSON JEARLD L.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 15 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Machines | |
#3 | Basic communication technologies | |
#4 | Electrical machinery and energy | |
#5 | Audio-visual technology | |
#6 | Telecommunications | |
#7 | Measurement |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Unspecified technologies | |
#3 | Electrically-conductive connections | |
#4 | Measuring electric variables | |
#5 | Amplifiers | |
#6 | Resonators | |
#7 | Casings and printed circuits | |
#8 | Waveguides |
# | Name | Total Patents |
---|---|---|
#1 | Thompson George H B | 4 |
#2 | Bahl Inder J | 3 |
#3 | Geissberger Arthur E | 3 |
#4 | Sadler Robert A | 2 |
#5 | Balzan Matthew L | 2 |
#6 | Landis Richard C | 2 |
#7 | Mun Joseph | 1 |
#8 | Dawe Piers J G | 1 |
#9 | Lewis Gary K | 1 |
#10 | Barker Graeme K | 1 |
Publication | Filing date | Title |
---|---|---|
US4833512A | Heterojunction photo-detector with transparent gate | |
US4847212A | Self-aligned gate FET process using undercut etch mask | |
US4816967A | Low impedance interconnect method and structure for high frequency IC such as GaAs | |
US4782032A | Method of making self-aligned GaAs devices having TiWNx gate/interconnect | |
US4788509A | Phase shifter | |
US4709300A | Jumper for a semiconductor assembly | |
US4679010A | Microwave circulator comprising a plurality of directional couplers connected together by isolation amplifiers | |
US4701573A | Semiconductor chip housing |