|
US2014042534A1
|
|
Trenched power MOSFET with enhanced breakdown voltage and fabrication method thereof
|
|
TW201347180A
|
|
Trench power mosfet and fabrication method thereof
|
|
TW201318166A
|
|
Trenched power mosfet with enhanced breakdown voltage and fabrication method thereof
|
|
TW201301359A
|
|
Fabrication method of trenched power semiconductor device with source trench
|
|
TW201246496A
|
|
Trenched power semiconductor device and fabrication method thereof
|
|
TW201241883A
|
|
Trench power mosfet structure with high switch speed and fabrication method thereof
|
|
TW201241882A
|
|
Trench power mosfet structure with high cell density and fabrication method thereof
|
|
TW201207950A
|
|
Fabrication method of trenched power semiconductor structure with low gate charge
|
|
US2011316077A1
|
|
Fabrication method of a power semicondutor structure with schottky diode
|
|
TW201145508A
|
|
Power semiconductor with trench bottom poly and fabrication method thereof
|
|
TW201140796A
|
|
Power semiconductor structure with field effect rectifier and fabrication method thereof
|
|
US7994001B1
|
|
Trenched power semiconductor structure with schottky diode and fabrication method thereof
|
|
TW201137982A
|
|
Fabrication method of self-aligned trenched power semiconductor structure
|
|
TW201137981A
|
|
Fabrication method of power semiconductor structure with reduced gate impenance
|
|
TW201135874A
|
|
Fabrication method of integrating power transistor and schottky diode on a monolithic substrate
|
|
TW201131662A
|
|
High cell density trenched power semiconductor structure and fabrication method thereof
|
|
TW201131698A
|
|
Power semiconductor structure with schottky diode and fabrication method thereof
|
|
TW201126652A
|
|
Trenched power semiconductor structure with schottky diode and fabrication method thereof
|
|
TW201125026A
|
|
Trenched power semiconductor structure with reduced gate impedance and fabrication method thereof
|
|
TW201115736A
|
|
Closed cell trench mosfet structure and fabrication method thereof
|
