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MAPLESEMICONDUCTOR INC

Overview
  • Total Patents
    26
  • GoodIP Patent Rank
    158,650
About

MAPLESEMICONDUCTOR INC has a total of 26 patent applications. Its first patent ever was published in 2009. It filed its patents most often in Republic of Korea. Its main competitors in its focus markets semiconductors and chemical engineering are SUZHOU HENGRONG ENERGY SAVING TECHNOLOGY INSTALLATION ENGINEERING CO LTD, KONO YOSHINOBU and ALSMEIER JOHANN.

Patent filings in countries

World map showing MAPLESEMICONDUCTOR INCs patent filings in countries
# Country Total Patents
#1 Republic of Korea 26

Patent filings per year

Chart showing MAPLESEMICONDUCTOR INCs patent filings per year from 1900 to 2020

Focus industries

Focus technologies

Top inventors

# Name Total Patents
#1 Jung Eun Sik 23
#2 Park Yong Po 20
#3 Kang Ey Goo 13
#4 Kim Woo Taek 8
#5 Park Tae Su 8
#6 Yang Chang Heon 8
#7 Yoo Won Young 1
#8 Kim Ki Hyun 1
#9 Yun Seung Bok 1
#10 Sung Man Young 1

Latest patents

Publication Filing date Title
KR20180007386A method for forming a passivation layer of a power semiconductor having high reliability
KR20170090542A Manufacturing method for trench of SiC having improved step-coverage
KR20170019526A semiconductor device having edge cell of internal pressure stabilization structure
KR20160144585A Method for manufacture sense mosfet having controlling function of sensor rate
KR20160092117A method for manufacture power semiconductor device having process of controlling switching characteristic
KR20160085505A Manufacturing Methods of Thermal Oxide Layer For SiC Power Semiconductor Devices And Manufacturing Methods of SiC Power Semiconductor Devices
KR101598512B1 Junction barrier schottky diode having epi Re-growth pattern and method for producing same
KR101595082B1 Process for producing schottky junction Type power semiconductor device
KR20160014837A Power semiconductor device having active cell arrangement structure in gate pad region
KR20150108485A Method for reducing on resistance of Power MOSFET JFET area by double implanting ion
KR20150108487A Method for improving Ruggedness of N-source of Power MOSFET
KR101504300B1 600V Super Junction MOSFET and fabricating the same
KR20150026105A Manufacturing method of MOSFET equipped with selective Life time controller
KR20150026104A Semiconductor
KR101413294B1 Power sense mosfet
KR101369973B1 Method of manufacturing power sense mosfet
KR20130133644A Semiconductor device
KR20130133643A Semiconductor device
KR20140006696A Semiconductor device
KR20140006698A Semiconductor device and manufacturing method of the same